NXP Semiconductors - BF861A,215

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BF861A,215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF861A,215
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Transistor Application: AMPLIFIER;
Datasheet BF861A,215 Datasheet
In Stock201
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: BF861A T/R
BF861A,215-ND
568-8477-1
568-8477-2
954-BF861A215
934034340215
BF861A T/R-ND
BF861A215
568-8477-6
Maximum Feedback Capacitance (Crss): 2.7 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Additional Features: LOW NOISE
Peak Reflow Temperature (C): 260
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