NXP Semiconductors - BFG195

  1. Home
  2. NXP Semiconductors - BFG195
BFG195 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BFG195
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
Datasheet BFG195 Datasheet
In Stock447
NAME DESCRIPTION
Nominal Transition Frequency (fT): 7500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 10 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-PRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Reference Standard: CECC
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
447 - -

Popular Products

Category Top Products

MPSH10 by Crimson Semiconductor

MPSH10

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
MMPQ2369R2G by Onsemi

MMPQ2369R2G

Onsemi

The Onsemi MMPQ2369R2G is a NPN RF BJT with 4 elements, suitable for switching applications. It has a max collector-emitter voltage of 15V, max operating temp of 150 °C, and fT of 550MHz. This transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.
NE85633-T1B-A by Nec Electronics America

NE85633-T1B-A

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
TIS128 by Texas Instruments

TIS128

Texas Instruments

TIS128 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.25W, hFE of 30, and fT of 6.5MHz. With a max operating temp of 175°C and VCE of 45V, it's suitable for high-frequency circuit designs.
MD5000 by Onsemi

MD5000

Onsemi

The Onsemi MD5000 is a PNP BJT transistor with 2 elements, ideal for amplifier applications in the UHF band. With a max fT of 900 MHz and VCE of 15V, it operates at up to 200 °C. Its metal package and isolated case connection make it suitable for high-frequency circuit designs.
SD1222-6 by STMicroelectronics

SD1222-6

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
START540 by STMicroelectronics

START540

STMicroelectronics

START540 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector current of 40 mA, operates up to 150 °C, and boasts a nominal transition frequency of 45 GHz. Its compact surface mount design ensures efficient performance in C band communications.
MSC2295-CT1 by Onsemi

MSC2295-CT1

Onsemi

The Onsemi MSC2295-CT1 is an NPN RF BJT transistor with a max operating temp of 150 °C. It has a min hFE of 110 and max fT of 150 MHz, making it ideal for amplifier applications. With a small outline package style and Gull Wing terminals, it's suitable for surface mount designs.
KSP10BU by Onsemi

KSP10BU

Onsemi

The Onsemi KSP10BU is an NPN RF BJT with a max fT of 650 MHz and hFE of 60. It operates at up to 150°C, has VCEO of 25V, and CCB of 0.7pF. Commonly used in ultra-high frequency applications due to its high transition frequency and low collector-base capacitance.
BFS17W by Infineon Technologies

BFS17W

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
BFP193E6327HTSA1 by Infineon Technologies

BFP193E6327HTSA1

Infineon Technologies

BFP193E6327HTSA1 by Infineon is an NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 8000 MHz and can handle a collector-emitter voltage of 12V. Ideal for ultra-high frequency amplification applications due to its small outline package and high power dissipation capability.
MMBTH10 by Taitron Components

MMBTH10

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BFR360L3E6765XTMA1 by Infineon Technologies

BFR360L3E6765XTMA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: GOLD;
MMBTH10 by Jiangsu Changjiang Electronics Technology

MMBTH10

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
MMBTH10 by Panjit International

MMBTH10

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-PDSO-G3;
AT-41511-TR1G by Agilent Technologies

AT-41511-TR1G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Transistor Application: AMPLIFIER; Additional Features: HIGH RELIABILITY;
MSC83301 by STMicroelectronics

MSC83301

STMicroelectronics

MSC83301 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 6W, operates up to 200 °C, and supports S-band frequencies. Its ceramic-metal sealed package ensures durability in demanding environments.
934067694115 by NXP Semiconductors

934067694115

NXP Semiconductors

RF Small Signal Bipolar Transistors;
KSC1730O by Onsemi

KSC1730O

Onsemi

KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.
MPSH17RLRAG by Onsemi

MPSH17RLRAG

Onsemi

MPSH17RLRAG by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.625W and fT of 800MHz. Ideal for amplifier applications, it operates in the very high-frequency band with a max collector-emitter voltage of 15V.