Infineon Technologies - BFP740ESDH6327XTSA1

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BFP740ESDH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFP740ESDH6327XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
Datasheet BFP740ESDH6327XTSA1 Datasheet
In Stock7,026
NAME DESCRIPTION
Nominal Transition Frequency (fT): 45000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .045 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM CARBON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .16 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: C BAND
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Minimum Power Gain (Gp): 14.5 dB
Other Names: BFP 740ESD H6327CT-ND
BFP740ESDH6327XTSA1TR
BFP740ESDH6327XTSA1CT
BFP 740ESD H6327
BFP 740ESD H6327CT
BFP 740ESD H6327TR-ND
BFP 740ESD H6327TR
BFP 740ESD H6327DKR
BFP 740ESD H6327DKR-ND
SP000785486
BFP740ESDH6327
BFP740ESDH6327XTSA1DKR
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 160
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 4.2 V
Maximum Collector-Base Capacitance: .8 pF
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