NXP Semiconductors - BFG325/XR

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BFG325/XR by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFG325/XR
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;
Datasheet BFG325/XR Datasheet
In Stock1,177
NAME DESCRIPTION
Nominal Transition Frequency (fT): 14000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .21 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: L BAND
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 60
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 6 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .4 pF
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