MMBTH10LT3 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MMBTH10LT3
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; JEDEC-95 Code: TO-236AB; Package Shape: RECTANGULAR;
Datasheet	MMBTH10LT3 Datasheet
In Stock	1,375

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	650 MHz
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	NPN
Surface Mount:	YES
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	25 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Collector-Base Capacitance:	.7 pF

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,375	-	-

CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;