NXP Semiconductors - BFG35-T

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BFG35-T by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFG35-T
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .15 A; Maximum Power Dissipation Ambient: 1 W;
Datasheet BFG35-T Datasheet
In Stock644
NAME DESCRIPTION
Nominal Transition Frequency (fT): 4000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 25
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 18 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: S BAND
Maximum Operating Temperature: 175 Cel
Reference Standard: CECC
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 1 W
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