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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BFG35T/R |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A; |
| Datasheet | BFG35T/R Datasheet |
| In Stock | 2,596 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 4000 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .15 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 1 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | S BAND |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 1 W |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 25 |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 18 V |
| Reference Standard: | CECC |
| Peak Reflow Temperature (C): | 260 |
