NXP Semiconductors - BFU660F,115

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BFU660F,115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFU660F,115
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .06 A; Terminal Finish: TIN; JESD-609 Code: e3;
Datasheet BFU660F,115 Datasheet
In Stock204
NAME DESCRIPTION
Other Names: 2156-BFU660F,115
NXPNXPBFU660F,115
568-8454-2
568-8454-1
BFU660F,115-ND
568-8454-6
BFU660F115
934064611115
954-BFU660F115
Maximum Collector Current (IC): .06 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 90
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .225 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
204 $0.223 $45.492

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