NXP Semiconductors - BFU730LXZ

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BFU730LXZ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BFU730LXZ
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON; JESD-609 Code: e3;
Datasheet BFU730LXZ Datasheet
In Stock5,714
NAME DESCRIPTION
Other Names: 568-13122-6
568-13122-2
568-13122-1
BFU730LXZ-ND
934066878225
Maximum Collector Current (IC): .03 A
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
Sub-Category: BIP RF Small Signals
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 205
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .16 W
No. of Elements: 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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