NXP Semiconductors - BGA7130,118

  1. Home
  2. NXP Semiconductors - BGA7130,118
BGA7130,118 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGA7130,118
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; No. of Functions: 1;
Datasheet BGA7130,118 Datasheet
In Stock582
NAME DESCRIPTION
Other Names: 568-14079-2
568-14079-1
BGA7130,118-ND
935294893118
568-14079-6
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
No. of Terminals: 8
Package Equivalence Code: SOLCC8,.12,20
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 550 mA
Power Supplies (V): 5
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
582 - -

Popular Products

Category Top Products

RDA1005L by Rf Micro Devices

RDA1005L

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; No. of Functions: 1;
HMC409LP4E by Hittite Microwave

HMC409LP4E

Hittite Microwave

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 28 dB;
HMC3653LP3BETR by Hittite Microwave

HMC3653LP3BETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;
AD8350ARMZ20 by Analog Devices

AD8350ARMZ20

Analog Devices

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.
ERA-5SM+ by Mini-circuits

ERA-5SM+

Mini-circuits

ERA-5SM+ by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, 50 ohm impedance, and 1.3 VSWR. It operates from 0 to 4000 MHz, handles up to 13 dBm input power, and has a compact surface mount package ideal for RF applications requiring amplification in the -45°C to 85°C temperature range.
HMC-ALH140 by Hittite Microwave

HMC-ALH140

Hittite Microwave

WIDE BAND LOW POWER; Gain: 10 dB; Minimum Operating Frequency: 24000 MHz; Additional Features: LOW NOISE; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
MAAL-011129-TR1000 by M/a-com Technology Solutions

MAAL-011129-TR1000

M/a-com Technology Solutions

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.
CMPA601C025D by Wolfspeed

CMPA601C025D

Wolfspeed

WIDE BAND HIGH POWER;
HMC549MS8G by Hittite Microwave

HMC549MS8G

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
ADL8142ACPZN-R7 by Analog Devices

ADL8142ACPZN-R7

Analog Devices

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.
HMC478MP86 by Hittite Microwave

HMC478MP86

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
SPF5043ZSQ by Qorvo

SPF5043ZSQ

Qorvo

SPF5043ZSQ by Qorvo is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications requiring surface mount technology.
ADL8106ACEZ by Analog Devices

ADL8106ACEZ

Analog Devices

WIDE BAND LOW POWER;
RA35H1516M by Mitsubishi Electric

RA35H1516M

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.
HMC1053 by Analog Devices

HMC1053

Analog Devices

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
MAX2643EXT+T by Analog Devices

MAX2643EXT+T

Analog Devices

Analog Devices' MAX2643EXT+T is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm input power, with an operating temperature range of -40 to 85°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
GALI-6F by Mini-circuits

GALI-6F

Mini-circuits

GALI-6F by Mini-circuits is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for RF & microwave applications requiring compact surface mount components.
HELA-10B by Mini-circuits

HELA-10B

Mini-circuits

HELA-10B by Mini-circuits is a wide band medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact form factor.
HMC462LP5ETR by Analog Devices

HMC462LP5ETR

Analog Devices

Analog Devices' HMC462LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 84mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.
HMC441LH5 by Analog Devices

HMC441LH5

Analog Devices

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.