NXP Semiconductors - BGD702MI

  1. Home
  2. NXP Semiconductors - BGD702MI
BGD702MI by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD702MI
Description WIDE BAND HIGH POWER; Construction: MODULE; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -20 Cel; Maximum Operating Frequency: 750 MHz; Minimum Operating Frequency: 40 MHz;
Datasheet BGD702MI Datasheet
In Stock613
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 750 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Minimum Operating Temperature: -20 Cel
Gain: 18.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
613 - -

Popular Products

Category Top Products

BGM1013 by Philips Semiconductors

BGM1013

Philips Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
SMA70-2 by Tyco Electronics M/a-com

SMA70-2

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Maximum Operating Frequency: 250 MHz; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Additional Features: LOW NOISE; Gain: 6.5 dB;
SPF-5122Z by Qorvo

SPF-5122Z

Qorvo

Qorvo's SPF-5122Z is a GAAS RF amplifier with 11.2dB gain, operating from 50MHz to 4GHz. It has a max input power of 27dBm and operates on a 5V supply, ideal for wideband medium-power applications in RF & microwave systems.
HMC3653LP3BETR by Analog Devices

HMC3653LP3BETR

Analog Devices

Analog Devices' HMC3653LP3BETR is a wide band low power RF amplifier with 12 terminals, operating from 7-15 GHz. It has a supply voltage of 5V and consumes up to 55mA current. Suitable for RF & microwave applications, it offers bipolar technology in a surface mount package.
ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.
MSA-0686-BLKG by Broadcom

MSA-0686-BLKG

Broadcom

Broadcom's MSA-0686-BLKG is a wide band low power RF amplifier with 16.5 dB gain, operating from 0 to 800 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for surface mount applications in RF & microwave systems. The component features a matte tin finish, operates at 3.5V with a supply current of 20 mA, and has a characteristic impedance of 50 ohms.
MGA-82563-TR1 by Broadcom

MGA-82563-TR1

Broadcom

Broadcom's MGA-82563-TR1 is a GAAS RF amplifier with 12dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications. The component features a plastic/epoxy package body, surface mounting feature, and operates b/w -40°C to 85°C.
TQP3M9008 by Triquint Semiconductor

TQP3M9008

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;
MMZ09312BT1 by NXP Semiconductors

MMZ09312BT1

NXP Semiconductors

The NXP Semiconductors MMZ09312BT1 is a wide band medium power RF amplifier with 29 dB gain, operating from 400 MHz to 1000 MHz. It has a max input power of 14 dBm and requires a 5V power supply with a max current draw of 83 mA. Ideal for applications requiring surface mount components in RF and microwave systems.
BGU7005,115 by NXP Semiconductors

BGU7005,115

NXP Semiconductors

The NXP Semiconductors BGU7005,115 is a RF & Microwave Amplifier with 14 dB gain and 50 ohm impedance. Operating b/w 1559-1610 MHz, it has a max input power of 0 dBm. Ideal for narrow band low power applications, this component is surface mountable and operates in temperatures ranging from -40 to 85 °C.
HMC8411LP2FE by Analog Devices

HMC8411LP2FE

Analog Devices

Analog Devices' HMC8411LP2FE is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it is ideal for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
NBB-300-T1 by Qorvo

NBB-300-T1

Qorvo

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
AMMP-6220 by Broadcom

AMMP-6220

Broadcom

Broadcom's AMMP-6220 is a wide band low power RF amplifier with 50 ohm impedance and 18 dB gain. Operating from 6-20 GHz, it features Ni/Pd/Au finish. Ideal for applications requiring high frequency amplification in RF & microwave systems.
MSA-1105-TR1 by Agilent Technologies

MSA-1105-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 70 mA;
HMC1040LP3CETR by Analog Devices

HMC1040LP3CETR

Analog Devices

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.
HMC441LP3TR by Analog Devices

HMC441LP3TR

Analog Devices

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.
MGA-81563 by Agilent Technologies

MGA-81563

Agilent Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
MGA-72543-TR1G by Agilent Technologies

MGA-72543-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;
HMC902LP3E by Hittite Microwave

HMC902LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.