NXP Semiconductors - BGD702MI

  1. Home
  2. NXP Semiconductors - BGD702MI
BGD702MI by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD702MI
Description WIDE BAND HIGH POWER; Construction: MODULE; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -20 Cel; Maximum Operating Frequency: 750 MHz; Minimum Operating Frequency: 40 MHz;
Datasheet BGD702MI Datasheet
In Stock613
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 750 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Minimum Operating Temperature: -20 Cel
Gain: 18.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
613 - -

Popular Products

Category Top Products

AG302-86G by Triquint Semiconductor

AG302-86G

Triquint Semiconductor

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC455LP3 by Analog Devices

HMC455LP3

Analog Devices

Analog Devices' HMC455LP3 is a GAAS RF amplifier with 9dB gain, operating from 1700-2500MHz. It has a max input power of 25dBm and VSWR of 1.4, suitable for narrowband medium-power applications in RF & microwave systems. The component features a plastic/epoxy package, surface mounting, and operates b/w -40 to 85°C.
MAX2691EWS+T by Maxim Integrated

MAX2691EWS+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; No. of Functions: 1;
HMC416LP4TR by Hittite Microwave

HMC416LP4TR

Hittite Microwave

NARROW BAND LOW POWER;
BLM7G1822S-20PBGY by NXP Semiconductors

BLM7G1822S-20PBGY

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
SKY67153-396LF by Skyworks Solutions

SKY67153-396LF

Skyworks Solutions

SKY67153-396LF by Skyworks Solutions is a wide band low power RF amplifier with 14.5 dB gain and 50 ohm impedance. It operates from 700 MHz to 3800 MHz, handling up to 21 dBm CW input power. Ideal for applications requiring high frequency amplification in temperatures ranging from -40°C to 105°C.
RA07N4047M-501 by Mitsubishi Electric

RA07N4047M-501

Mitsubishi Electric

NARROW BAND HIGH POWER;
BGA231N7E6330XTSA1 by Infineon Technologies

BGA231N7E6330XTSA1

Infineon Technologies

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.
HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.
TGA2975-SM by Triquint Semiconductor

TGA2975-SM

Triquint Semiconductor

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAN; No. of Functions: 1;
HMC516LC5 by Analog Devices

HMC516LC5

Analog Devices

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.
HMC636ST89 by Hittite Microwave

HMC636ST89

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
RF3827TR7 by Qorvo

RF3827TR7

Qorvo

Qorvo's RF3827TR7 is a GAAS wide band medium power amplifier with 20.5 dB gain, operating from 5 MHz to 1500 MHz. It has a max input power of 13 dBm and VSWR of 20, suitable for surface mount applications in RF & microwave systems requiring up to 8V supply voltage.
AC1226 by Teledyne Cougar

AC1226

Teledyne Cougar

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 79 mA; Package Equivalence Code: CAN4,.3;
HMC462 by Hittite Microwave

HMC462

Hittite Microwave

WIDE BAND LOW POWER; Technology: GAAS; Gain: 12 dB; Package Equivalence Code: DIE OR CHIP; No. of Functions: 1; Power Supplies (V): 5;
HMC752LC4TR by Analog Devices

HMC752LC4TR

Analog Devices

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.
MGA-635P8-TR1G by Broadcom

MGA-635P8-TR1G

Broadcom

Broadcom's MGA-635P8-TR1G is a GAAS RF amplifier with 16.5 dB gain, operating from 2300 to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V supply, making it ideal for wideband medium-power applications in RF and microwave systems. With a compact surface-mount package and high temperature range (-40 to 85°C), it offers reliable performance in various environments.