NXP Semiconductors - BGD702N,112

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BGD702N,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD702N,112
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel;
Datasheet BGD702N,112 Datasheet
In Stock3,608
NAME DESCRIPTION
Other Names: 934051230112
NXPNXPBGD702N,112
BGD702N-ND
2156-BGD702N112-NX
BGD702N,112-ND
568-5602
BGD702N
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 435 mA
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 750 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 18.5 dB
Power Supplies (V): 24
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Pricing (USD)

Qty. Unit Price Ext. Price
3,608 $31.670 $114,265.360

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