HYBRID RF & Microwave Amplifiers 406

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
RF5110GTR7	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		HYBRID		1	13 dBm	10	2400 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	33 dB	-40 Cel	Matte Tin (Sn)		e3	150 MHz	960 MHz
MWA330	Motorola	WIDE BAND LOW POWER		3	METAL	HYBRID			20 dBm	3	100 mA	MODULE		CAN3/4,.2	50 ohm	RF/Microwave Amplifiers	80 Cel		-25 Cel	Tin/Lead (Sn/Pb)		e0	.1 MHz	1000 MHz
RF5110GSR	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		HYBRID		1	13 dBm	10	2400 mA	COMPONENT	3.5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	33 dB	-40 Cel	Matte Tin (Sn)		e3	150 MHz	960 MHz
RA30H1317M	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				135 MHz	175 MHz
M57710-A	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	2.8		MODULE	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				156 MHz	160 MHz
RA30H1317M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				135 MHz	175 MHz
RA07H4047M-501	Mitsubishi Electric	NARROW BAND HIGH POWER	THROUGH HOLE MOUNT	4	PLASTIC/EPOXY	HYBRID		1	14.77 dBm	4		MODULE	12.5	MODULE,4LEAD,.74	50 ohm		90 Cel	25.22 dB	-30 Cel				400 MHz	470 MHz
RA35H1516M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				154 MHz	162 MHz
CMA-84+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	8	CERAMIC	HYBRID		1	13 dBm	1.24	130 mA	COMPONENT	5		50 ohm		85 Cel	14.3 dB	-45 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	HIGH RELIABILITY	e4	0 MHz	7000 MHz
MAR-3SM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			13 dBm	1.7	35 mA	COMPONENT	5	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-20 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	0 MHz	2000 MHz
M57706L	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	4		MODULE	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				135 MHz	145 MHz
RA07H4047M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	14.77 dBm	4		MODULE	3.5,12.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel		-30 Cel				400 MHz	470 MHz
RFPA3800SR	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	HYBRID	IEC-61249-2-21	1	20 dBm	5	2300 mA	COMPONENT	7	SOP8,.25		RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel		LOW NOISE		150 MHz	960 MHz
MAR-8ASM	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		1	13 dBm	1.8		COMPONENT	3.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	0 MHz	1000 MHz
MAR-8ASM+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		1	13 dBm	1.8		COMPONENT	3.7	SL,4GW-LD,.085CIR	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	Tin/Silver (Sn/Ag) - with Nickel (Ni) barrier	LOW NOISE	e2	0 MHz	1000 MHz
RA18H1213G-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	24.77 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel	23 dB	-30 Cel				1240 MHz	1300 MHz
M67799HA	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			14.77 dBm	20		MODULE	3.5,9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				450 MHz	470 MHz
RA07M4047M	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	18.45 dBm	4		MODULE	3.5,7.2	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				400 MHz	470 MHz
RA20H8994M-101	Mitsubishi Electric	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	3		MODULE	5,12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				896 MHz	941 MHz
S-AV35	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	13 dBm	3		COMPONENT	12.5	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	33 dB	-30 Cel				154 MHz	162 MHz
MHW916	Motorola	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			19 dBm	2		COMPONENT	12.5	MOT CASE 301AB-01	50 ohm	RF/Microwave Amplifiers	85 Cel	26.5 dB	-5 Cel				925 MHz	960 MHz
MMZ25332B4T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			23.5 dB		TIN		e3	1500 MHz	2700 MHz
AMMC-6220-W10	Broadcom	WIDE BAND LOW POWER				HYBRID		1	15 dBm		70 mA	COMPONENT	3	DIE OR CHIP	50 ohm	RF/Microwave Amplifiers		21 dB					6000 MHz	20000 MHz
MHW806A4	Motorola	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			12.5 dBm	30	2400 mA	COMPONENT	12.5	MOT CASE 301H-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				870 MHz	950 MHz
AWT6283RM49P8	Skyworks Solutions	NARROW BAND MEDIUM POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	HYBRID		1		10	170 mA	COMPONENT	3.3	SOLCC10,.16,34	50 ohm		85 Cel	31 dB	-40 Cel				3300 MHz	3800 MHz
CA2830C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-20 Cel				5 MHz	200 MHz
MHL19926	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	17 dBm	1.5	1050 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	28.4 dB	-20 Cel				1930 MHz	1990 MHz
MHL9128	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	1.5	440 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				800 MHz	960 MHz
MHL9838N	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID		1	6 dBm	1.5	800 mA	COMPONENT	28	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	925 MHz
MHW2821-2	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	3	500 mA	COMPONENT	12.5	MOT CASE 301AB-02	50 ohm	RF/Microwave Amplifiers	100 Cel	17.9 dB	-30 Cel				890 MHz	950 MHz
MHW5185	Motorola	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID					435 mA		24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				40 MHz	450 MHz
MHW592	Motorola	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2	340 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	90 Cel	33.5 dB	-20 Cel		LOW NOISE		1 MHz	250 MHz
MHW707-1	Motorola	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			0 dBm	2		MODULE	7.5	MOT CASE 301J-02	50 ohm	RF/Microwave Amplifiers	80 Cel		-30 Cel				403 MHz	440 MHz
MHW820-2	Motorola	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			24 dBm	2	7140 mA	MODULE	12.5	MOT CASE 301G-03	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-40 Cel				806 MHz	890 MHz
MWA320	Motorola	WIDE BAND LOW POWER		3	METAL	HYBRID			-20 dBm	3	55 mA	MODULE		CAN3/4,.2	50 ohm	RF/Microwave Amplifiers	80 Cel	7 dB	-25 Cel	Tin/Lead (Sn/Pb)		e0	.1 MHz	1000 MHz
S-AV6	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			24.77 dBm	2		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	21.4 dB	-30 Cel				154 MHz	162 MHz
TRF7610PWPR	Texas Instruments		SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID							4.8	TSSOP24,.25		RF/Microwave Amplifiers	85 Cel		-40 Cel
ADCA3992AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	8		HYBRID		1			550 mA	MODULE	34	SOT-115J	75 ohm		85 Cel	26.7 dB	-30 Cel				45 MHz	1218 MHz
STM915-16	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	4.77 dBm	2		COMPONENT	8,12.5	FLNG,2.26"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	42 dB	-30 Cel				890 MHz	915 MHz
TSTM952-20	STMicroelectronics				PLASTIC/EPOXY	HYBRID							12.5	MOT CASE 301G-03		RF/Microwave Amplifiers
STM915-14	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			4.77 dBm	2		MODULE	8,12.5	FLNG,2.26"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				890 MHz	915 MHz
STM961-15B	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	14 dBm	2		COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-10 Cel				915 MHz	960 MHz
STM1645-30	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			13 dBm	2		COMPONENT	12,28	MOT CASE 700-04	50 ohm	RF/Microwave Amplifiers	70 Cel	34.8 dB	-35 Cel				1625 MHz	1665 MHz
TSTM872-20	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	2		MODULE	12.5	MOT CASE 301G-03	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				806 MHz	870 MHz
BGD902	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		435 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel		LOW NOISE		40 MHz	900 MHz
BGD704/07,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			435 mA		24	SOT-115J		RF/Microwave Amplifiers
BGY883	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	15 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGD814,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.