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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BGD814,112 |
| Description | WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Characteristic Impedance: 75 ohm; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel; |
| Datasheet | BGD814,112 Datasheet |
| In Stock | 3,704 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
934055919112 568-5609 BGD814 954-BGD814112 BGD814112 BGD814,112-ND BGD814-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Construction: | MODULE |
| Minimum Operating Frequency: | 40 MHz |
| Sub-Category: | RF/Microwave Amplifiers |
| Maximum Supply Current: | 410 mA |
| Minimum Operating Temperature: | -20 Cel |
| Maximum Input Power (CW): | 21.25 dBm |
| Package Equivalence Code: | SOT-115J |
| Technology: | HYBRID |
| Characteristic Impedance: | 75 ohm |
| Additional Features: | LOW NOISE, HIGH RELIABILITY |
| Maximum Operating Temperature: | 100 Cel |
| Maximum Operating Frequency: | 870 MHz |
| RF or Microwave Device Type: | WIDE BAND HIGH POWER |
| Gain: | 20.5 dB |
| Power Supplies (V): | 24 |









