HYBRID RF & Microwave Amplifiers 406

Reset All
Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MHW8185R

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

435 mA

MODULE

24

MOT CASE 714Y-02

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

40 MHz

860 MHz

MHL9318N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

1.5

560 mA

COMPONENT

28

MOT CASE 301-01

50 ohm

RF/Microwave Amplifiers

100 Cel

16.25 dB

-20 Cel

860 MHz

900 MHz

MHW5182A

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

-20 Cel

40 MHz

450 MHz

MHW7222B

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22.2 dB

-20 Cel

40 MHz

750 MHz

MHW1910-1

NXP Semiconductors

NARROW BAND HIGH POWER

METAL

HYBRID

21 dBm

2

COMPONENT

5,26

MOT CASE 301AW-02

50 ohm

RF/Microwave Amplifiers

85 Cel

24 dB

-10 Cel

1930 MHz

1990 MHz

MHW8222B

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

21.8 dB

-20 Cel

40 MHz

860 MHz

MHL9838

NXP Semiconductors

WIDE BAND HIGH POWER

METAL

HYBRID

6 dBm

1.5

800 mA

COMPONENT

28

MOT CASE 301AP-01

50 ohm

RF/Microwave Amplifiers

100 Cel

30 dB

-20 Cel

800 MHz

925 MHz

MHL8115

NXP Semiconductors

WIDE BAND MEDIUM POWER

METAL

HYBRID

20 dBm

2.6

760 mA

COMPONENT

15

MOT CASE 448-01

50 ohm

RF/Microwave Amplifiers

100 Cel

16.5 dB

-20 Cel

LOW NOISE

50 MHz

1000 MHz

CGY887A,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

25.7 dB

-20 Cel

GOLD

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

MHW5222A

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22 dB

-20 Cel

40 MHz

450 MHz

MHW7242A

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

350 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

24 dB

-20 Cel

40 MHz

750 MHz

MHW7272A

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

350 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

27 dB

-20 Cel

40 MHz

750 MHz

MHW7185CL

NXP Semiconductors

WIDE BAND HIGH POWER

METAL

HYBRID

385 mA

MODULE

24

MOT CASE 714Y-03

75 ohm

RF/Microwave Amplifiers

100 Cel

18.7 dB

-20 Cel

40 MHz

750 MHz

MHW1815

NXP Semiconductors

NARROW BAND HIGH POWER

METAL

HYBRID

17 dBm

3

COMPONENT

5,26

MOT CASE 301AK-01

50 ohm

RF/Microwave Amplifiers

85 Cel

30 dB

-30 Cel

1805 MHz

1880 MHz

MHL19926N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

17 dBm

1.5

1050 mA

COMPONENT

26

MOT CASE 301AY-01

50 ohm

RF/Microwave Amplifiers

100 Cel

27.9 dB

-20 Cel

1930 MHz

1990 MHz

MHL18926

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

18 dBm

1.5

1150 mA

COMPONENT

26

MOT CASE 301AY-01

50 ohm

RF/Microwave Amplifiers

100 Cel

27.6 dB

-20 Cel

1805 MHz

1880 MHz

MHW8185L

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

385 mA

MODULE

24

MOT CASE 714Y-03

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

40 MHz

870 MHz

MHW7292

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

6.25 dBm

350 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

40 MHz

750 MHz

MHW8292

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

6.25 dBm

350 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

40 MHz

860 MHz

CGY1049,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

MHW9242A

NXP Semiconductors

WIDE BAND MEDIUM POWER

METAL

HYBRID

350 mA

MODULE

24

MOT CASE 714Y-03

75 ohm

RF/Microwave Amplifiers

100 Cel

24 dB

-20 Cel

40 MHz

1000 MHz

MHW8185

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

435 mA

MODULE

24

MOT CASE 714Y-02

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

40 MHz

860 MHz

CGD942C

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

28 dBm

MODULE

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

22 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

40 MHz

870 MHz

MHW8242A

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

HYBRID

350 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

24 dB

-20 Cel

40 MHz

860 MHz

MHW8182C

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

18.2 dB

-20 Cel

40 MHz

860 MHz

MHW7185C

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

435 mA

MODULE

24

MOT CASE 714Y-02

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

40 MHz

750 MHz

CGD1040HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

-20 Cel

MHW8205L

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

385 mA

MODULE

24

MOT CASE 714Y-03

75 ohm

RF/Microwave Amplifiers

100 Cel

19.8 dB

-20 Cel

40 MHz

870 MHz

CGY1041,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

CGD944C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

24

SOT-115J

RF/Microwave Amplifiers

CGY887,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

250 mA

COMPONENT

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22 dB

-20 Cel

40 MHz

870 MHz

CGD914MI

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

375 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.2 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

MMZ27333BT1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

10 dBm

1.55

COMPONENT

5

LCC24,.16SQ,20

50 ohm

34.8 dB

TIN

e3

1500 MHz

2700 MHz

MHW1353LA

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

110 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

34.5 dB

-20 Cel

5 MHz

150 MHz

CGY888C

NXP Semiconductors

WIDE BAND LOW POWER

PLASTIC/EPOXY

HYBRID

1

300 mA

MODULE

24

SOT-115J

RF/Microwave Amplifiers

100 Cel

34.5 dB

-20 Cel

LOW NOISE

40 MHz

870 MHz

MHW1254LC

NXP Semiconductors

NARROW BAND LOW POWER

PLASTIC/EPOXY

HYBRID

110 mA

12

MOT CASE 431A-02

75 ohm

RF/Microwave Amplifiers

100 Cel

-20 Cel

5 MHz

200 MHz

MHW7182B

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

MOT CASE 714Y-02

75 ohm

RF/Microwave Amplifiers

100 Cel

18.2 dB

-20 Cel

40 MHz

750 MHz

MHW9182C

NXP Semiconductors

WIDE BAND HIGH POWER

METAL

HYBRID

240 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

18.7 dB

-20 Cel

40 MHz

1000 MHz

MHPA18010

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

20 dBm

2

COMPONENT

28

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

24.5 dB

-20 Cel

1800 MHz

1900 MHz

MHL9236

NXP Semiconductors

WIDE BAND HIGH POWER

METAL

HYBRID

10 dBm

1.5

620 mA

COMPONENT

26

MOT CASE 301AP-01

50 ohm

RF/Microwave Amplifiers

100 Cel

29.5 dB

-20 Cel

800 MHz

960 MHz

CGD923,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

490 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

19.5 dB

-20 Cel

GOLD

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

MHW1304LC

NXP Semiconductors

NARROW BAND LOW POWER

PLASTIC/EPOXY

HYBRID

110 mA

12

MOT CASE 431A-02

75 ohm

RF/Microwave Amplifiers

100 Cel

-20 Cel

5 MHz

200 MHz

MHL19338

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

10 dBm

1.5

525 mA

COMPONENT

28

MOT CASE 301AP-01

50 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

1900 MHz

2000 MHz

MHL9318

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

20 dBm

1.5

560 mA

COMPONENT

28

MOT CASE 301-01

50 ohm

RF/Microwave Amplifiers

100 Cel

17 dB

-20 Cel

860 MHz

900 MHz

MHW1223LA

NXP Semiconductors

WIDE BAND HIGH POWER

HYBRID

1

110 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

22.1 dB

-20 Cel

5 MHz

200 MHz

MHW7185CR

NXP Semiconductors

WIDE BAND HIGH POWER

METAL

HYBRID

435 mA

MODULE

24

MOT CASE 714Y-03

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

40 MHz

750 MHz

MHW8222

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

21.8 dB

-20 Cel

40 MHz

860 MHz

MHL19936

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

16 dBm

1.5

1450 mA

COMPONENT

26

MOT CASE 301AY-01

50 ohm

RF/Microwave Amplifiers

100 Cel

28 dB

-20 Cel

1900 MHz

2000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.