NXP Semiconductors - MHW1815

  1. Home
  2. NXP Semiconductors - MHW1815
MHW1815 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHW1815
Description NARROW BAND HIGH POWER; Package Body Material: METAL; Technology: HYBRID; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 1880 MHz; Maximum Voltage Standing Wave Ratio: 3;
Datasheet MHW1815 Datasheet
In Stock3,898
NAME DESCRIPTION
Package Body Material: METAL
Construction: COMPONENT
Minimum Operating Frequency: 1805 MHz
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -30 Cel
Maximum Voltage Standing Wave Ratio: 3
Maximum Input Power (CW): 17 dBm
Package Equivalence Code: MOT CASE 301AK-01
Technology: HYBRID
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1880 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 30 dB
Power Supplies (V): 5,26
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,898 $135.560 $528,412.880

Popular Products

Category Top Products

MGA-86576-TR1 by Hewlett Packard

MGA-86576-TR1

Hewlett Packard

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2.5; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 8000 MHz; Construction: COMPONENT; Gain: 20 dB;
HMC478SC70ETR by Analog Devices

HMC478SC70ETR

Analog Devices

Analog Devices' HMC478SC70ETR is a wide band low power RF amplifier with 5V supply, 82mA max current, and -40 to 85°C operating range. Its bipolar technology and surface mount package make it ideal for RF & microwave applications requiring high performance in compact designs.
GALI-39+ by Mini-circuits

GALI-39+

Mini-circuits

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.
HMC6981LS6 by Hittite Microwave

HMC6981LS6

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;
HMC788ALP2E by Hittite Microwave

HMC788ALP2E

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 10000 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT;
MHT2012NT1 by NXP Semiconductors

MHT2012NT1

NXP Semiconductors

The NXP Semiconductors MHT2012NT1 is a RF amplifier with 29.7 dB gain, operating b/w 2400-2500 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications in the RF & Microwave field. The component is constructed with plastic/epoxy material and features surface mounting for ease of installation.
HMC816LP4ETR by Analog Devices

HMC816LP4ETR

Analog Devices

Analog Devices' HMC816LP4ETR is a GAAS technology RF amplifier with 2 functions, 24 terminals, and operates at temperatures from -40 to 85°C. It has a power supply of 5V and max supply current of 126mA. Ideal for wideband low-power RF or microwave applications due to its surface mount package body material made of plastic/epoxy.
MSA-1105-TR1 by Broadcom

MSA-1105-TR1

Broadcom

Broadcom's MSA-1105-TR1 is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. This component features a plastic/epoxy package body, surface mounting feature, and operates at 5.5V with a max supply current of 70mA.
HMC636ST89E by Hittite Microwave

HMC636ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
GRF2013 by Guerrilla Rf

GRF2013

Guerrilla Rf

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.
HMC441LP3 by Hittite Microwave

HMC441LP3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 6500 MHz;
ADL5536ARKZ-R7 by Analog Devices

ADL5536ARKZ-R7

Analog Devices

ADL5536ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 18.1 dB gain, suitable for frequencies ranging from 20 MHz to 1000 MHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within the specified frequency range.
HMC451LP3ETR by Analog Devices

HMC451LP3ETR

Analog Devices

HMC451LP3ETR by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18 GHz. With a max input power of 10 dBm, it's ideal for wideband low-power applications in RF and microwave systems requiring surface mount components.
SMA3107-TL-E by Onsemi

SMA3107-TL-E

Onsemi

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
BGU6005/N2X by NXP Semiconductors

BGU6005/N2X

NXP Semiconductors

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.
HMC455LP3 by Hittite Microwave

HMC455LP3

Hittite Microwave

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;
MW7IC2040NR1 by NXP Semiconductors

MW7IC2040NR1

NXP Semiconductors

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.
CMD264 by Qorvo

CMD264

Qorvo

WIDE BAND LOW POWER;
AG302-86G by Wj Communications

AG302-86G

Wj Communications

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
HMC797LP5ETR by Hittite Microwave

HMC797LP5ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 10;