NXP Semiconductors - MHW8292

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 0 MHz;

NPA1006A-TR0500 by M/a-com: RF amplifier with 12.5dB gain, 20-1000MHz frequency range, and 50 ohm impedance. Ideal for wideband high-power applications in temperatures from -40 to 85°C. Package material is plastic/epoxy, suitable for surface mount installation with 8 terminals.

ALM-32220 by Broadcom is a wide band high power RF amplifier with 13.5 dB gain, operating from 1700 to 2700 MHz. It can handle up to 28 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & Microwave systems.

WIDE BAND LOW POWER; Construction: COAXIAL; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -54 Cel; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2.3;

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;

Qorvo's SBF-4089Z is a GAAS RF amplifier with 13.2 dB gain, operating from 0 to 500 MHz. It has a max input power of 19 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with matte tin terminals.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

Qorvo's QPA2225D is a GAN technology RF amplifier with 23 dB gain, operating from 28-38 GHz. It offers 18 dBm CW input power, VSWR of 3, and operates on a 20V supply. Ideal for wideband medium-power applications in RF & microwave systems.

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 50 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;

WIDE BAND MEDIUM POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

Qorvo's TQP7M9105 RF amplifier offers 19.4 dB gain with a wide band of 50-1500 MHz, handling up to 30 dBm CW input power. Ideal for applications requiring high-performance RF amplification in environments ranging from -40°C to 85°C.

WIDE BAND HIGH POWER;

TE Connectivity's A33 RF & Microwave Amplifier features 15V power supply, 4 terminals, and 16mA max supply current. With a metal package body, it operates b/w 0-50°C. Ideal for applications requiring reliable amplification in various temperature conditions.

Analog Devices' HMC429LP4E is a RF & Microwave Amplifier with VSWR of 2, operating from -40°C to 85°C. It's a narrow band low power device with 50 ohm impedance, covering frequencies from 4450 MHz to 5000 MHz. Ideal for applications requiring precise amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.8;

Analog Devices' HMC505LP4TR is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a voltage supply of 3V and uses bipolar technology for narrowband low-power applications. The package body material is plastic/epoxy, suitable for surface mounting.

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.