Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
12.5 |
FLNG,2.26"H.SPACE |
RF/Microwave Amplifiers |
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Renesas Electronics |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
HYBRID |
4.8 |
SMSIP4,5GNDFLNG |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
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Renesas Electronics |
THROUGH HOLE MOUNT |
11 |
HYBRID |
12 |
SIP11,.1 |
RF/Microwave Amplifiers |
80 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Renesas Electronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
9.6 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
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Renesas Electronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
7.2 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
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Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
CERAMIC |
HYBRID |
3.5 |
SOLCC8,.3 |
RF/Microwave Amplifiers |
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Renesas Electronics |
5 |
PLASTIC/EPOXY |
HYBRID |
1 |
240 mA |
24 |
MODULE,5LEAD(UNSPEC) |
RF/Microwave Amplifiers |
90 Cel |
-40 Cel |
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Renesas Electronics |
METAL |
HYBRID |
10 |
NEC,CASE MCX03 |
RF/Microwave Amplifiers |
100 Cel |
-55 Cel |
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Renesas Electronics |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
7.2 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
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Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
HYBRID |
4.6 |
SOLCC8,.3 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
Renesas Electronics |
NARROW BAND HIGH POWER |
8 |
PLASTIC/EPOXY |
HYBRID |
3.5 |
MODULE,8LEAD,.54 |
RF/Microwave Amplifiers |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
23 dBm |
1000 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
18000 MHz |
28000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
20 dBm |
1050 mA |
COMPONENT |
5.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
12 dB |
37000 MHz |
42000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
20 dBm |
1050 mA |
COMPONENT |
5.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
12 dB |
37000 MHz |
42000 MHz |
|||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
23 dBm |
1000 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
18000 MHz |
28000 MHz |
|||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
23 dBm |
1000 mA |
COMPONENT |
5.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
25000 MHz |
33000 MHz |
|||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
HYBRID |
1 |
23 dBm |
1000 mA |
COMPONENT |
5.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
16.5 dB |
6000 MHz |
18000 MHz |
|||||||||||||
Broadcom |
SURFACE MOUNT |
26 |
PLASTIC/EPOXY |
HYBRID |
2 |
3/5 |
LCC26(UNSPEC) |
RF/Microwave Amplifiers |
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Broadcom |
SURFACE MOUNT |
26 |
PLASTIC/EPOXY |
HYBRID |
2 |
3/5 |
LCC26(UNSPEC) |
RF/Microwave Amplifiers |
|||||||||||||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
HYBRID |
1 |
10 dBm |
2 |
490 mA |
COMPONENT |
3.4 |
SOLCC10,.12SQ,24 |
50 ohm |
90 Cel |
8 dB |
-20 Cel |
832 MHz |
862 MHz |
||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
HYBRID |
1 |
10 dBm |
2 |
490 mA |
COMPONENT |
3.4 |
SOLCC10,.12SQ,24 |
50 ohm |
90 Cel |
8 dB |
-20 Cel |
832 MHz |
862 MHz |
||||||||
Samsung |
16 |
HYBRID |
3.5 |
MODULE,16LEAD,.54 |
RF/Microwave Amplifiers |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.