Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
21.25 dBm |
240 mA |
MODULE |
28 |
MOT CASE 714Y-02 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
-20 Cel |
40 MHz |
750 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
10 dBm |
1.55 |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
34.8 dB |
Tin (Sn) |
e3 |
1500 MHz |
2700 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
415 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
23.5 dB |
Tin (Sn) |
e3 |
1500 MHz |
2700 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
Tin (Sn) |
e3 |
3400 MHz |
3800 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
17 dBm |
5 |
COMPONENT |
4,9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
400 MHz |
420 MHz |
|||||||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
12.5 |
FLNG,2.4"H.SPACE |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
15 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
490 MHz |
512 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
400 MHz |
430 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
400 MHz |
470 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
32 dB |
-30 Cel |
134 MHz |
174 MHz |
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Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
21.76 dBm |
3 |
COMPONENT |
9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.4 dB |
-30 Cel |
430 MHz |
480 MHz |
||||||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
5,7.5 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
135 MHz |
150 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
17 dBm |
2.5 |
COMPONENT |
7.2 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
260 MHz |
266 MHz |
||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24.77 dBm |
20 |
MODULE |
13 |
FLNG,1.45"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
-30 Cel |
824 MHz |
849 MHz |
|||||||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
12.5 |
FLNG,2.4"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
12.5 |
FLNG,2.4"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24.77 dBm |
20 |
MODULE |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
144 MHz |
148 MHz |
|||||||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
5,7.5 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
450 MHz |
520 MHz |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
450 MHz |
490 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
160 MHz |
174 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
5 |
PLASTIC/EPOXY |
HYBRID |
3.6 |
MODULE,5LEAD,.53 |
RF/Microwave Amplifiers |
||||||||||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
28 dB |
-30 Cel |
450 MHz |
520 MHz |
|||||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
5,7.5 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
134 MHz |
174 MHz |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
17 dBm |
20 |
MODULE |
9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
144 MHz |
148 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
490 MHz |
512 MHz |
|||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
CERAMIC |
HYBRID |
12.3 dBm |
20 |
MODULE |
6 |
LCC5(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-35 Cel |
Tin/Lead (Sn/Pb) |
e0 |
824 MHz |
849 MHz |
|||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
12.5 |
FLNG,2.4"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
13.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
889 MHz |
915 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
2 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.7 dB |
-30 Cel |
144 MHz |
148 MHz |
||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
10.8 |
FLNG,1.6"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
150 MHz |
165 MHz |
||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
14.77 dBm |
20 |
MODULE |
5,12.5 |
FLNG,1.45"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
144 MHz |
148 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
24.77 dBm |
2 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.5 dB |
-30 Cel |
150 MHz |
175 MHz |
||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
26 dBm |
20 |
MODULE |
5,7.5 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
470 MHz |
490 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
28 dB |
-30 Cel |
400 MHz |
470 MHz |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
4,9.6 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
|||||||||||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
HYBRID |
12.3 dBm |
20 |
MODULE |
6 |
LCC5(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-35 Cel |
Tin/Lead (Sn/Pb) |
e0 |
872 MHz |
905 MHz |
|||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
5,7.5 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
PLASTIC/EPOXY |
HYBRID |
5,7.5 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
||||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
20 dBm |
3 |
COMPONENT |
12.5 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30.7 dB |
-30 Cel |
378 MHz |
440 MHz |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
9.6 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
|||||||||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
18 |
HYBRID |
1 |
6 dBm |
3 |
1500 mA |
COMPONENT |
4.5 |
LCC18,.1X.14,20 |
85 Cel |
24 dB |
-30 Cel |
1750 MHz |
1910 MHz |
|||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
4,9.6 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
|||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
27.78 dBm |
20 |
MODULE |
15 |
FLNG,2.4"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
400 MHz |
430 MHz |
|||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
4,9.6 |
FLNG,1.0"H.SPACE |
RF/Microwave Amplifiers |
|||||||||||||||||||||
Toshiba |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
17 dBm |
3 |
COMPONENT |
4,9.6 |
FLNG,1.0"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
25.4 dB |
-30 Cel |
430 MHz |
450 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.