Toshiba - S-AV7

  1. Home
  2. Toshiba - S-AV7
S-AV7 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AV7
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 12.5; Maximum Input Power (CW): 24.77 dBm; Minimum Operating Frequency: 144 MHz;
Datasheet S-AV7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 144 MHz
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -30 Cel
Maximum Voltage Standing Wave Ratio: 20
Maximum Input Power (CW): 24.77 dBm
Package Equivalence Code: FLNG,2.4"H.SPACE
Technology: HYBRID
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 148 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Power Supplies (V): 12.5
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC478ST89ETR by Hittite Microwave

HMC478ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;
MAAM-011290-TR0500 by M/a-com Technology Solutions

MAAM-011290-TR0500

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER;
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
MWA330 by Motorola

MWA330

Motorola

The Motorola MWA330 is a RF & Microwave Amplifier with max input power of 20 dBm and VSWR of 3. It operates in wide band low power applications from 0.1 MHz to 1000 MHz, making it ideal for various hybrid technology modules. With a metal package body, it can withstand temperatures from -25°C to 80°C.
LT5524EFE#PBF by Linear Technology

LT5524EFE#PBF

Linear Technology

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;
HMC441LH5 by Analog Devices

HMC441LH5

Analog Devices

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.
MSA-1105 by Hewlett Packard

MSA-1105

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
RF5110GSR by Rf Micro Devices

RF5110GSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;
MMZ09312BT1 by NXP Semiconductors

MMZ09312BT1

NXP Semiconductors

The NXP Semiconductors MMZ09312BT1 is a wide band medium power RF amplifier with 29 dB gain, operating from 400 MHz to 1000 MHz. It has a max input power of 14 dBm and requires a 5V power supply with a max current draw of 83 mA. Ideal for applications requiring surface mount components in RF and microwave systems.
HMC451LP3E by Hittite Microwave

HMC451LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 5000 MHz;
MSA-1105 by Broadcom

MSA-1105

Broadcom

Broadcom's MSA-1105 is a RF & Microwave Amplifier with 13 dBm CW input power, 1.7 VSWR, and 50 ohm impedance. Ideal for wide band low power applications from 50 MHz to 1300 MHz, it operates b/w -25°C to 85°C with a max supply current of 70 mA.
MGA-82563-TR1 by Agilent Technologies

MGA-82563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
CMD244K5 by Qorvo

CMD244K5

Qorvo

WIDE BAND LOW POWER;
MAX2640EUT+T by Analog Devices

MAX2640EUT+T

Analog Devices

Analog Devices' MAX2640EUT+T is a wideband low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for applications requiring surface mount construction in RF & microwave systems.
ADL9006ACGZN-R7 by Analog Devices

ADL9006ACGZN-R7

Analog Devices

RF/Microwave Amplifiers;
CMD328K3 by Qorvo

CMD328K3

Qorvo

WIDE BAND LOW POWER;
HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.
HMC564LC4 by Hittite Microwave

HMC564LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;
HMC374ETR by Hittite Microwave

HMC374ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Power Supplies (V): 5;
HMC462LP5 by Hittite Microwave

HMC462LP5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;