HYBRID RF & Microwave Amplifiers 406

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CA5800C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		18 dBm	2.6	440 mA	MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGY785AD/8M	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID	1			265 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
CA2832C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		5 dBm	2		MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	90 Cel	34 dB	-20 Cel		HIGH RELIABILITY		1 MHz	200 MHz
BGD802,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGD885	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				450 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY885B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGD906MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGD704	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CA4812C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6	400 mA	MODULE	12	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
CA4815C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6		MODULE	15	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGE788,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				320 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGD812,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY587,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY120A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				824 MHz	849 MHz
BGD906	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY87	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	21.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY1085A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
BGD804,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY85A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGD508	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID	1			625 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	36.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	550 MHz
BGY916/5,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	19 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
BGY241	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID	1	10 dBm	3		COMPONENT	3.5	MODULE,4LEAD,.67	50 ohm	RF/Microwave Amplifiers	100 Cel	35.2 dB	-30 Cel				880 MHz	915 MHz
BGY67A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGY67,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	21.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGY835C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			340 mA		24	SOT-115J		RF/Microwave Amplifiers
BGF802-20,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
CA2810C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33 dB	-20 Cel		HIGH RELIABILITY		10 MHz	450 MHz
BGD816L	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID	1			375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY119C	NXP Semiconductors		SURFACE MOUNT	4	CERAMIC	HYBRID						4.8	SMSIP4,4GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
BGY888	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
OM335	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGY1916	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID	3	20.79 dBm	1.6		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	24 dB	-10 Cel				1930 MHz	1990 MHz
BGY588C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			345 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	33.7 dB	-20 Cel				40 MHz	550 MHz
BGY580	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	12.5 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
BGD814	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY585A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY148A	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	440 MHz
BGY1085A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
BGE787B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGY282	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	12	CERAMIC	HYBRID	2	10 dBm	3		COMPONENT	3.5	LCC12(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
BGD904,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY84	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY587B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGD702	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CA4815CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6	400 mA	MODULE	15	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGD804	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY87B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	26.2 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY583	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1	16.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	14.5 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.