NXP Semiconductors - BGD906

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BGD906 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD906
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; JESD-609 Code: e4; Maximum Supply Current: 435 mA; Characteristic Impedance: 75 ohm;
Datasheet BGD906 Datasheet
In Stock371
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 435 mA
Terminal Finish: Gold (Au)
JESD-609 Code: e4
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 900 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 22 dB
Power Supplies (V): 24
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