NXP Semiconductors - BGY583

  1. Home
  2. NXP Semiconductors - BGY583
BGY583 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY583
Description WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Maximum Operating Frequency: 550 MHz; Maximum Input Power (CW): 16.25 dBm;
Datasheet BGY583 Datasheet
In Stock177
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 240 mA
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Maximum Input Power (CW): 16.25 dBm
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOWNOISE
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 550 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 14.5 dB
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
177 - -

Popular Products

Category Top Products

CMPA0060002F by Wolfspeed

CMPA0060002F

Wolfspeed

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.
HMC462LP5 by Hittite Microwave

HMC462LP5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;
HMC499 by Hittite Microwave

HMC499

Hittite Microwave

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Gain: 12 dB; Minimum Operating Frequency: 21000 MHz;
BGM1013 by Philips Semiconductors

BGM1013

Philips Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 5; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
MGA-61563-TR1G by Agilent Technologies

MGA-61563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 6000 MHz;
HMC506LP4ETR by Hittite Microwave

HMC506LP4ETR

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
HMC498LC4 by Analog Devices

HMC498LC4

Analog Devices

Analog Devices' HMC498LC4 is a GAAS RF amplifier with 18dB gain, operating from 17-24GHz. It has a max input power of 10dBm and operates on a 5V supply. This wideband medium-power device is ideal for RF and microwave applications requiring high performance in a compact ceramic package.
A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;
PHA-13LN+ by Mini-circuits

PHA-13LN+

Mini-circuits

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.
XF1001-SC-0G00 by M/a-com Technology Solutions

XF1001-SC-0G00

M/a-com Technology Solutions

XF1001-SC-0G00 by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
MGA-72543-BLK by Broadcom

MGA-72543-BLK

Broadcom

Broadcom's MGA-72543-BLK is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems.
TSS-53LNB+ by Mini-circuits

TSS-53LNB+

Mini-circuits

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;
ADL5523ACPZ-R7 by Analog Devices

ADL5523ACPZ-R7

Analog Devices

ADL5523ACPZ-R7 by Analog Devices is a wideband high-power RF amplifier with 17.5 dB gain, operating from 400 MHz to 4 GHz. It features GaAs technology, matte tin terminal finish, and a plastic/epoxy package suitable for surface mount applications in RF and microwave systems.
HMC907ALP5E by Analog Devices

HMC907ALP5E

Analog Devices

WIDE BAND LOW POWER;
MGA-86576-TR1G by Broadcom

MGA-86576-TR1G

Broadcom

Broadcom's MGA-86576-TR1G is a wide band low power RF amplifier with 20 dB gain, operating from 1500 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 2.5, suitable for various RF & microwave applications requiring high performance in a compact form factor.
HMC606LC5 by Hittite Microwave

HMC606LC5

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
RFPA3800SR by Qorvo

RFPA3800SR

Qorvo

Qorvo's RFPA3800SR is a wide band high power amplifier with 15 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 20 dBm and can handle up to 7V power supplies. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.
ECG008B-G by Triquint Semiconductor

ECG008B-G

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 7.2;
HMC311SC70E by Analog Devices

HMC311SC70E

Analog Devices

HMC311SC70E by Analog Devices is a GAAS RF amplifier with 11 dB gain, operating from 0 to 8000 MHz. It has a max input power of 10 dBm and operates on a 5V supply with a current draw of 74 mA. Ideal for wideband low-power applications requiring surface mount installation in temperatures ranging from -40 to 85°C.