NXP Semiconductors - BGD812,112

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BGD812,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD812,112
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel;
Datasheet BGD812,112 Datasheet
In Stock2,703
NAME DESCRIPTION
Other Names: BGD812-ND
BGD812
BGD812,112-ND
954-BGD812112
568-5608
934055918112
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 410 mA
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 870 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 19 dB
Power Supplies (V): 24
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