NXP Semiconductors - BGD812,112

BGD812,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD812,112
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel;
Datasheet BGD812,112 Datasheet
In Stock800
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 410 mA
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 870 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 19 dB
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
800 - -

Popular Products

Category Top Products