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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | BGD812,112 |
Description | WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Minimum Operating Frequency: 40 MHz; Maximum Operating Temperature: 100 Cel; |
Datasheet | BGD812,112 Datasheet |
In Stock | 800 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Construction: | MODULE |
Minimum Operating Frequency: | 40 MHz |
Sub-Category: | RF/Microwave Amplifiers |
Maximum Supply Current: | 410 mA |
Minimum Operating Temperature: | -20 Cel |
Package Equivalence Code: | SOT-115J |
Technology: | HYBRID |
Characteristic Impedance: | 75 ohm |
Additional Features: | LOW NOISE, HIGH RELIABILITY |
Maximum Operating Temperature: | 100 Cel |
Maximum Operating Frequency: | 870 MHz |
RF or Microwave Device Type: | WIDE BAND HIGH POWER |
Gain: | 19 dB |
Power Supplies (V): | 24 |