NXP Semiconductors - CGD914MI

  1. Home
  2. NXP Semiconductors - CGD914MI
CGD914MI by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number CGD914MI
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Gain: 20.2 dB; Minimum Operating Frequency: 40 MHz; Power Supplies (V): 24;
Datasheet CGD914MI Datasheet
In Stock1,527
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 375 mA
Terminal Finish: Gold (Au)
JESD-609 Code: e4
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 870 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 20.2 dB
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,527 - -

Popular Products

Category Top Products

MMZ09332BT1 by Freescale Semiconductor

MMZ09332BT1

Freescale Semiconductor

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;
HMC478MP86TR by Hittite Microwave

HMC478MP86TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
QPA1011 by Qorvo

QPA1011

Qorvo

Qorvo's QPA1011 is a wide band high power RF amplifier with 28 dB gain and 30 dBm CW input power. Operating from 7900 to 11000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & microwave systems, with a temperature range of -40 to 85°C.
CMPA801B030S by Wolfspeed

CMPA801B030S

Wolfspeed

WIDE BAND HIGH POWER;
935363184528 by NXP Semiconductors

935363184528

NXP Semiconductors

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
HMC287MS8ETR by Analog Devices

HMC287MS8ETR

Analog Devices

Analog Devices' HMC287MS8ETR is a GaAs RF amplifier with 3V supply, 15mA max current, and -40 to 85°C operating range. Ideal for narrowband low-power applications, it features a surface-mount package suitable for RF and microwave circuits.
HMC634LC4 by Hittite Microwave

HMC634LC4

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz;
MGA-72543-TR1 by Agilent Technologies

MGA-72543-TR1

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;
MGA-82563-TR1 by Hewlett Packard

MGA-82563-TR1

Hewlett Packard

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.2; Minimum Operating Frequency: 100 MHz;
QPA1019 by Qorvo

QPA1019

Qorvo

Qorvo's QPA1019 is a wide band high power RF amplifier with 30 dB gain, handling up to 28 dBm CW input power. Operating from 4.5 GHz to 7 GHz, it's ideal for applications requiring robust amplification in RF & microwave systems. With gold terminal finish and operating temperatures from -40°C to 85°C, it ensures reliable performance in various environments.
MAX2640AUT+T by Analog Devices

MAX2640AUT+T

Analog Devices

MAX2640AUT+T by Analog Devices is a wide band low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm, operates on 3/5 V supplies, and draws a max current of 7.8 mA. This component is ideal for RF and microwave applications requiring surface mounting in temperatures ranging from -40°C to 125°C.
HMC478MP86E by Hittite Microwave

HMC478MP86E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 0 MHz;
BGU6101,147 by NXP Semiconductors

BGU6101,147

NXP Semiconductors

The NXP Semiconductors BGU6101,147 is a wide band low power RF amplifier with 4dB gain. It operates b/w 40MHz to 4000MHz, suitable for various RF and microwave applications. With a max supply current of 10mA and operating temperature range from -40°C to 85°C, it is ideal for surface mount installations.
ADL8142ACPZN-CSL by Analog Devices

ADL8142ACPZN-CSL

Analog Devices

WIDE BAND LOW POWER;
MAX9931EUA+T by Maxim Integrated

MAX9931EUA+T

Maxim Integrated

MAX9931EUA+T by Maxim Integrated is a wide band low power RF amplifier with 50 ohm impedance. It operates from 2 MHz to 1600 MHz, handling up to 16 dBm CW input power. Ideal for RF and microwave applications, it has a temperature range of -40°C to 85°C.
ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.
HMC455LP3 by Hittite Microwave

HMC455LP3

Hittite Microwave

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;
PSA4-5043+ by Mini-circuits

PSA4-5043+

Mini-circuits

Mini-circuits PSA4-5043+ is a wideband low power RF amplifier with 16.5 dB gain, operating from 50 MHz to 4000 MHz. It can handle up to 23 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
QPA2612 by Qorvo

QPA2612

Qorvo

Qorvo's QPA2612 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power, VSWR of 4, and is ideal for wideband high-power applications in surface-mount configurations.
A64 by TE Connectivity

A64

TE Connectivity

TE Connectivity's A64 is a RF & Microwave Amplifier with a metal package body. It operates at temperatures ranging from 0 to 50 °C and requires a power supply of 15V. With 4 terminals and a max supply current of 38mA, it is suitable for various applications in the field of RF and microwave amplification.