NXP Semiconductors - MHW5182A

  1. Home
  2. NXP Semiconductors - MHW5182A
MHW5182A by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHW5182A
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Power Supplies (V): 24; Minimum Operating Frequency: 40 MHz;
Datasheet MHW5182A Datasheet
In Stock4,657
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 240 mA
Minimum Operating Temperature: -20 Cel
Maximum Input Power (CW): 21.25 dBm
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 450 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,657 - -

Popular Products

Category Top Products

MGA-30789-BLKG by Broadcom

MGA-30789-BLKG

Broadcom

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
HMC441LP3ETR by Analog Devices

HMC441LP3ETR

Analog Devices

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.
MGA-82563-BLKG by Agilent Technologies

MGA-82563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;
SGA-6489Z by Sirenza Microdevices

SGA-6489Z

Sirenza Microdevices

SGA-6489Z by Sirenza Microdevices is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and VSWR of 1.8, suitable for surface mount applications in RF & microwave systems.
HMC391LP4E by Hittite Microwave

HMC391LP4E

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;
BGA715N7E6327XTSA2 by Infineon Technologies

BGA715N7E6327XTSA2

Infineon Technologies

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.
MMG3H21NT1 by NXP Semiconductors

MMG3H21NT1

NXP Semiconductors

MMG3H21NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 18.3 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 12 dBm input power, and draws a max of 110 mA at 5 V. Ideal for applications requiring high-frequency signal amplification in compact setups.
MGA-85563-BLKG by Agilent Technologies

MGA-85563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;
XP1050-QJ-0G0T by Mimix Broadband

XP1050-QJ-0G0T

Mimix Broadband

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 25 dBm; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;
MGA-31689-TR1G by Broadcom

MGA-31689-TR1G

Broadcom

Broadcom's MGA-31689-TR1G is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. Ideal for wideband medium-power applications due to its surface-mount construction and characteristic impedance of 50 ohms.
HMC863ALC4 by Analog Devices

HMC863ALC4

Analog Devices

Analog Devices' HMC863ALC4 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for RF and microwave applications requiring high performance in the -40 to 85°C temperature range.
MAX2640EUT-T by Maxim Integrated

MAX2640EUT-T

Maxim Integrated

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.
MAAM-011290-TR0500 by M/a-com Technology Solutions

MAAM-011290-TR0500

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER;
XB1007-QT-0G00 by Mimix Broadband

XB1007-QT-0G00

Mimix Broadband

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 4000 MHz; Gain: 23 dB; Maximum Operating Frequency: 11000 MHz; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
MSA-0686-BLK by Hewlett Packard

MSA-0686-BLK

Hewlett Packard

WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;
BGU6005/N2X by NXP Semiconductors

BGU6005/N2X

NXP Semiconductors

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.
BGB719N7ESDE6327XTMA1 by Infineon Technologies

BGB719N7ESDE6327XTMA1

Infineon Technologies

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;
HMC608LC4TR by Hittite Microwave

HMC608LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
HMC465LP5E by Analog Devices

HMC465LP5E

Analog Devices

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.