NXP Semiconductors - MHL9838

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 412 mA;

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP8,.19;

Qorvo's RDA1005LTR13 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for surface mount applications in RF & microwave systems.

Broadcom's MGA-62563-TR1G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, surface mounting, and requires 3-5V power supply with a max current draw of 77 mA.

WIDE BAND LOW POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Characteristic Impedance: 50 ohm;

The NXP Semiconductors BGU7004,115 is a RF & Microwave Amplifier with 6 terminals and AEC-Q100 screening. Operating voltage of 1.8V, max supply current of 14.4mA, and temp range from -40 to 125°C make it ideal for automotive applications. Its surface mount package body material is plastic/epoxy with tin terminal finish.

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.

Analog Devices' HMC799LP3E is a wide band low power RF amplifier with 42 dB gain. Operating from -40°C to 85°C, it covers frequencies from 0 MHz to 700 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Broadcom's MGA-82563-BLKG is a GAAS RF amplifier with 8.8 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component is surface-mountable with a max supply current of 101 mA and operates b/w -40°C to 85°C.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: LCC16,.16SQ,25;

MAX2232EEE by Maxim Integrated is a RF amplifier with 23.9 dB gain, operating frequency range of 800-1000 MHz, and VSWR of 1.5. It is ideal for narrowband medium power applications requiring a max input power of 10 dBm in plastic/epoxy package suitable for surface mounting.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.

Broadcom's MGA-23003-TR1G is a GAAS RF amplifier with 32dB gain, operating b/w 3.3-3.8GHz. It has a max input power of 15dBm and is ideal for narrowband medium-power applications in the RF & Microwave field.