Analog Devices - HMC799LP3E

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

Analog Devices' HMC441LP3E is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handling up to 15 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to +85°C.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.

HMC-AUH312 by Analog Devices is a GAAS technology RF amplifier with 10 dB gain, operating from 500 MHz to 80 GHz. It has a max input power of 10 dBm and requires an 8V power supply. Ideal for wide band low power applications, this component is designed for surface mounting with a characteristic impedance of 50 ohms.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;

Broadcom's MGA-86576-STRG is a ceramic RF amplifier with 20dB gain, operating from 1500MHz to 8000MHz. It has a max input power of 13dBm and VSWR of 2.5, suitable for wideband low-power applications requiring a characteristic impedance of 50Ω.

Broadcom's MSA-1105 is a RF & Microwave Amplifier with 13 dBm CW input power, 1.7 VSWR, and 50 ohm impedance. Ideal for wide band low power applications from 50 MHz to 1300 MHz, it operates b/w -25°C to 85°C with a max supply current of 70 mA.

Analog Devices' HMC383LC4TR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 135mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.

BGB741L7ESD-E6327 by Infineon Technologies is a RF & Microwave Amplifier with 3V power supply, 7 terminals, and gold finish. It operates on bipolar technology with a max current of 7.2mA. Ideal for surface mount applications in various electronic devices.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;

GVA-63+ by Mini-circuits is a wide band low power RF amplifier with 19 dB gain, operating from 10 MHz to 6 GHz. It has a max input power of 13 dBm and operates on a 5V supply with a max current draw of 78 mA. Ideal for applications requiring amplification in the RF and microwave range.

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: CAN4,.3; Power Supplies (V): 15; Minimum Operating Frequency: 10 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; JESD-609 Code: e3;

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.

HMC952ALP5GETR by Analog Devices is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It can handle up to 24 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

Mitsubishi Electric's M57710-A is a hybrid module for RF applications. With 26 dBm CW input power, it operates in the narrow band from 156-160 MHz. Featuring a max VSWR of 2.8, it is suitable for high-power amplification in various communication systems.

Qorvo's QPA1019 is a wide band high power RF amplifier with 30 dB gain, handling up to 28 dBm CW input power. Operating from 4.5 GHz to 7 GHz, it's ideal for applications requiring robust amplification in RF & microwave systems. With gold terminal finish and operating temperatures from -40°C to 85°C, it ensures reliable performance in various environments.

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel;