NXP Semiconductors - MHW2821-2

  1. Home
  2. NXP Semiconductors - MHW2821-2
MHW2821-2 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number MHW2821-2
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 500 mA; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 890 MHz;
Datasheet MHW2821-2 Datasheet
In Stock4,513
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 890 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 500 mA
Minimum Operating Temperature: -30 Cel
Maximum Voltage Standing Wave Ratio: 3
Maximum Input Power (CW): 26 dBm
Package Equivalence Code: MOT CASE 301AB-02
Technology: HYBRID
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 950 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 17.9 dB
Power Supplies (V): 12.5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,513 - -

Popular Products

Category Top Products

HMC788ALP2ETR by Analog Devices

HMC788ALP2ETR

Analog Devices

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.
MGA-31689-BLKG by Broadcom

MGA-31689-BLKG

Broadcom

Broadcom's MGA-31689-BLKG is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. This wide band medium power device is ideal for applications requiring surface mount construction in RF & microwave systems.
MMG3H21NT1 by Freescale Semiconductor

MMG3H21NT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: TO-243; Maximum Supply Current: 110 mA;
HMC414MS8GETR by Analog Devices

HMC414MS8GETR

Analog Devices

Analog Devices' HMC414MS8GETR is a RF amplifier with 17 dB gain, operating from 2200-2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.
HMC311LP3ETR by Analog Devices

HMC311LP3ETR

Analog Devices

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.
HMC498LC4 by Analog Devices

HMC498LC4

Analog Devices

Analog Devices' HMC498LC4 is a GAAS RF amplifier with 18dB gain, operating from 17-24GHz. It has a max input power of 10dBm and operates on a 5V supply. This wideband medium-power device is ideal for RF and microwave applications requiring high performance in a compact ceramic package.
MGA-72543-BLKG by Broadcom

MGA-72543-BLKG

Broadcom

Broadcom's MGA-72543-BLKG is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package body, matte tin terminal finish, and operates on a 3V power supply.
HMC752LC4 by Hittite Microwave

HMC752LC4

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 28000 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e4; Maximum Input Power (CW): -5 dBm; Maximum Operating Temperature: 85 Cel;
MGA-82563-TR1G by Agilent Technologies

MGA-82563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
TQL9062 by Qorvo

TQL9062

Qorvo

The Qorvo TQL9062 is a wide band medium power RF amplifier with 15 dB gain, operating from 500 MHz to 6 GHz. It has a max input power of 33 dBm and VSWR of 1.29, suitable for various RF applications. Constructed with E-PHEMT technology, it features a plastic/epoxy package body and operates b/w -40°C to 105°C.
LT5524EFE#PBF by Linear Technology

LT5524EFE#PBF

Linear Technology

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;
MAAM-011112-TR0500 by M/a-com Technology Solutions

MAAM-011112-TR0500

M/a-com Technology Solutions

MAAM-011112-TR0500 by M/a-com Technology Solutions is a wide band low power RF amplifier with 21 dB gain. It operates b/w 20-37 GHz, suitable for various RF & microwave applications. With a max input power of 0 dBm and operating temperature range from -40 to 85°C, it offers reliable performance in diverse environments.
ADL5523ACPZ-R7 by Analog Devices

ADL5523ACPZ-R7

Analog Devices

ADL5523ACPZ-R7 by Analog Devices is a wideband high-power RF amplifier with 17.5 dB gain, operating from 400 MHz to 4 GHz. It features GaAs technology, matte tin terminal finish, and a plastic/epoxy package suitable for surface mount applications in RF and microwave systems.
HMC414MS8GE by Hittite Microwave

HMC414MS8GE

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Gain: 17 dB; Maximum Operating Frequency: 2800 MHz;
SGA2463Z by Qorvo

SGA2463Z

Qorvo

SGA2463Z by Qorvo is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 0 to 5000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring surface mount construction.
HMC453ST89ETR by Hittite Microwave

HMC453ST89ETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC694LP4ETR by Analog Devices

HMC694LP4ETR

Analog Devices

Analog Devices' HMC694LP4ETR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and is designed for wideband low-power applications in RF & microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting.
SST13LP05-MLCF by Silicon Storage Technology

SST13LP05-MLCF

Silicon Storage Technology

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; No. of Functions: 2;
BGA715N7E6327XTSA2 by Infineon Technologies

BGA715N7E6327XTSA2

Infineon Technologies

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.