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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BGD704,112 |
| Description | WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Maximum Supply Current: 435 mA; Maximum Operating Temperature: 100 Cel; |
| Datasheet | BGD704,112 Datasheet |
| In Stock | 2,326 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
934019230112 BGD704-ND BGD704 568-5604 BGD704,112-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Construction: | MODULE |
| Minimum Operating Frequency: | 40 MHz |
| Sub-Category: | RF/Microwave Amplifiers |
| Maximum Supply Current: | 435 mA |
| Minimum Operating Temperature: | -20 Cel |
| Package Equivalence Code: | SOT-115J |
| Technology: | HYBRID |
| Characteristic Impedance: | 75 ohm |
| Additional Features: | LOW NOISE, HIGH RELIABILITY |
| Maximum Operating Temperature: | 100 Cel |
| Maximum Operating Frequency: | 750 MHz |
| RF or Microwave Device Type: | WIDE BAND HIGH POWER |
| Gain: | 20 dB |
| Power Supplies (V): | 24 |









