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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BGD816L,112 |
| Description | WIDE BAND HIGH POWER; Technology: HYBRID; Additional Features: LOW NOISE, HIGH RELIABILITY; Maximum Operating Frequency: 870 MHz; Package Equivalence Code: SOT-115J; Maximum Supply Current: 375 mA; |
| Datasheet | BGD816L,112 Datasheet |
| In Stock | 4,302 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
954-BGD816L112 BGD816L,112-ND BGD816L112 BGD816L BGD816L-ND 568-5610 934056494112 |
| Construction: | MODULE |
| Minimum Operating Frequency: | 40 MHz |
| Sub-Category: | RF/Microwave Amplifiers |
| Maximum Supply Current: | 375 mA |
| Minimum Operating Temperature: | -20 Cel |
| No. of Functions: | 1 |
| Package Equivalence Code: | SOT-115J |
| Technology: | HYBRID |
| Characteristic Impedance: | 75 ohm |
| Additional Features: | LOW NOISE, HIGH RELIABILITY |
| Maximum Operating Temperature: | 100 Cel |
| Maximum Operating Frequency: | 870 MHz |
| RF or Microwave Device Type: | WIDE BAND HIGH POWER |
| Gain: | 22 dB |
| Power Supplies (V): | 24 |









