NXP Semiconductors - BGD816L,112

  1. Home
  2. NXP Semiconductors - BGD816L,112
BGD816L,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD816L,112
Description WIDE BAND HIGH POWER; Technology: HYBRID; Additional Features: LOW NOISE, HIGH RELIABILITY; Maximum Operating Frequency: 870 MHz; Package Equivalence Code: SOT-115J; Maximum Supply Current: 375 mA;
Datasheet BGD816L,112 Datasheet
In Stock4,302
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 375 mA
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 870 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 22 dB
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,302 - -

Popular Products

Category Top Products

MGA-72543-TR1G by Agilent Technologies

MGA-72543-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;
HMC1040CHIPS-SX by Analog Devices

HMC1040CHIPS-SX

Analog Devices

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.
BGU6005/N2X by NXP Semiconductors

BGU6005/N2X

NXP Semiconductors

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.
PHA-202+ by Mini-circuits

PHA-202+

Mini-circuits

The Mini-circuits PHA-202+ is a wideband medium power RF amplifier with 13.2 dB gain, operating from 30 MHz to 2700 MHz. It can handle up to 19 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
MAX2640AUT+T by Analog Devices

MAX2640AUT+T

Analog Devices

MAX2640AUT+T by Analog Devices is a wide band low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm, operates on 3/5 V supplies, and draws a max current of 7.8 mA. This component is ideal for RF and microwave applications requiring surface mounting in temperatures ranging from -40°C to 125°C.
MSA-0686-BLKG by Broadcom

MSA-0686-BLKG

Broadcom

Broadcom's MSA-0686-BLKG is a wide band low power RF amplifier with 16.5 dB gain, operating from 0 to 800 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for surface mount applications in RF & microwave systems. The component features a matte tin finish, operates at 3.5V with a supply current of 20 mA, and has a characteristic impedance of 50 ohms.
HMC960LP4E by Hittite Microwave

HMC960LP4E

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 0 dB;
HMC636ST89 by Hittite Microwave

HMC636ST89

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
HMC963LC4 by Analog Devices

HMC963LC4

Analog Devices

Analog Devices' HMC963LC4 is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It can handle up to 0 dBm CW input power, ideal for RF & microwave applications requiring high frequency amplification in temperatures ranging from -40°C to 85°C.
ABA-52563-TR1G by Agilent Technologies

ABA-52563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 20 dBm;
HMC863ALC4TR by Analog Devices

HMC863ALC4TR

Analog Devices

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.
BGU6102,147 by NXP Semiconductors

BGU6102,147

NXP Semiconductors

NXP Semiconductors' BGU6102,147 is a wide band low power RF amplifier with 6 terminals and operates on 3V supply. With a max operating temperature of 85°C, it is ideal for surface mount applications in RF and microwave systems.
RA35H1516M by Mitsubishi Electric

RA35H1516M

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.
LEE-39+ by Mini-circuits

LEE-39+

Mini-circuits

The Mini-circuits LEE-39+ is a wide band low power RF amplifier with 18.5 dB gain, operating from 0 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.
HMC608LC4TR by Analog Devices

HMC608LC4TR

Analog Devices

Analog Devices' HMC608LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current of 350mA, suitable for wideband medium-power applications in surface-mount setups.
AFIC901NT1 by NXP Semiconductors

AFIC901NT1

NXP Semiconductors

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.
HMC506LP4E by Analog Devices

HMC506LP4E

Analog Devices

Analog Devices' HMC506LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 7800-8700 MHz, and VSWR of 2. It is ideal for narrow band low power applications in temperatures ranging from -40 to 85°C.
NPA1006A-TR0500 by M/a-com Technology Solutions

NPA1006A-TR0500

M/a-com Technology Solutions

NPA1006A-TR0500 by M/a-com: RF amplifier with 12.5dB gain, 20-1000MHz frequency range, and 50 ohm impedance. Ideal for wideband high-power applications in temperatures from -40 to 85°C. Package material is plastic/epoxy, suitable for surface mount installation with 8 terminals.
HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.
HMC907A by Analog Devices

HMC907A

Analog Devices

HMC907A by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12.5 dB gain. Ideal for wide band medium power applications, it operates from -55°C to 85°C within the frequency range of 200 MHz to 22 GHz.