NXP Semiconductors - BGR269,112

Analog Devices' HMC451LC3TR is a wide band low power RF amplifier with 14 dB gain, operating from 5-20 GHz. It features a max input power of 10 dBm and operates in temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact ceramic package.

Sirenza Microdevices' SBB-4089Z is a GAAS wide band low power RF amplifier with 14 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply with a current draw of 92 mA. Ideal for applications requiring surface mount components in RF & microwave systems.

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; No. of Functions: 1;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.

The Mini-circuits PGA-102+ is a wide band low power RF amplifier with 14.4 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 28 dBm and operates on a 3.3V supply, making it suitable for various RF and microwave applications requiring amplification in the frequency range of 50-6000 MHz.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Power Supplies (V): 28;

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;

HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

SST12CP11-QVCE by Microchip Technology is a RF & Microwave Amplifier with 16 terminals and operates on a 5V power supply. It features bipolar technology, can withstand temperatures from -40°C to 85°C, and comes in a surface mount package. Ideal for applications requiring high-frequency signal amplification.

Broadcom's MGA-72543-TR1 is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, operates at temperatures from -40°C to 85°C, and requires a 3V power supply.

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.

WIDE BAND MEDIUM POWER;

Broadcom's MGA-62563-BLKG is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3 GHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component features a plastic/epoxy package body, matte tin terminals, and requires 3-5V power supply at 77 mA.

Qorvo's SPF5122ZSR is a GAAS RF amplifier with 11.2 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 27 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, it features a surface-mount package with matte tin terminals.