NXP Semiconductors - BGU7003W

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

XP1035-QH-0G0T by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wide band medium power applications requiring surface mounting feature.

NARROW BAND MEDIUM POWER; Gain: 16.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

TQP7M9102 by Qorvo is a wide band medium power RF amplifier with 15 dB gain, operating from 400 MHz to 4000 MHz. It can handle up to 27 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

Qorvo's NBB-400-T1 is a ceramic RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates at temperatures from -45 to 85°C and requires a 3.9V supply voltage.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Gain: 12 dB; Minimum Operating Frequency: 21000 MHz;

Qorvo's SPF-5122Z is a GAAS RF amplifier with 11.2dB gain, operating from 50MHz to 4GHz. It has a max input power of 27dBm and operates on a 5V supply, ideal for wideband medium-power applications in RF & microwave systems.

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.

Qorvo's RF5110GSR is a wideband medium power amplifier with 33dB gain, operating from 150MHz to 960MHz. It has a max input power of 13dBm and VSWR of 10, suitable for RF & microwave applications requiring high performance in a compact form factor. The hybrid construction and surface mount feature make it ideal for various communication systems.

WIDE BAND LOW POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Characteristic Impedance: 50 ohm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Screening Level: IEC-61249-2-21;

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Maximum Supply Current: 38 mA; Power Supplies (V): 15; Maximum Operating Temperature: 50 Cel;

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;