NXP Semiconductors - BGU7008

RF/Microwave Amplifiers;

The Mini-circuits PGA-102+ is a wide band low power RF amplifier with 14.4 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 28 dBm and operates on a 3.3V supply, making it suitable for various RF and microwave applications requiring amplification in the frequency range of 50-6000 MHz.

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Gain: 10 dB; Minimum Operating Frequency: 24000 MHz; Additional Features: LOW NOISE; Construction: COMPONENT; Characteristic Impedance: 50 ohm;

WIDE BAND HIGH POWER; Maximum Operating Temperature: 85 Cel; Gain: 26 dB; Maximum Input Power (CW): 15 dBm; Minimum Operating Frequency: 5900 MHz; Minimum Operating Temperature: -55 Cel;

SKY65624-682LF by Skyworks Solutions is a RF amplifier with 16dB gain, operating frequency range of 1559-1606MHz. It has VSWR of 1.5, BICMOS technology, and can handle up to 0dBm input power. Ideal for narrowband low-power applications in RF & microwave systems due to its compact size and surface mount feature.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3/5;

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.

Broadcom's MGA-82563-TR1G is a GAAS RF amplifier with 8.8dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates b/w -40°C to 85°C.

HMC441LM1 by Analog Devices is a wide band low power RF amplifier with 11 dB gain and 15 dBm max input power. It operates b/w 7-15.5 GHz, has a characteristic impedance of 50 ohms, and requires a 5V power supply. Ideal for RF & microwave applications requiring high performance in a compact package.

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

Analog Devices' HMC963LC4 is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It can handle up to 0 dBm CW input power, ideal for RF & microwave applications requiring high frequency amplification in temperatures ranging from -40°C to 85°C.

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

ERA-5SM+ by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, 50 ohm impedance, and 1.3 VSWR. It operates from 0 to 4000 MHz, handles up to 13 dBm input power, and has a compact surface mount package ideal for RF applications requiring amplification in the -45°C to 85°C temperature range.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.8;

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.