NXP Semiconductors - BGY110E

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BGY110E by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY110E
Description NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Gain: 32.3 dB; Maximum Operating Frequency: 905 MHz;
Datasheet BGY110E Datasheet
In Stock122
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: COMPONENT
Maximum Input Power (CW): 4.77 dBm
Minimum Operating Frequency: 872 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 90 Cel
Maximum Operating Frequency: 905 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Gain: 32.3 dB
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