NXP Semiconductors - BGY110F

  1. Home
  2. NXP Semiconductors - BGY110F
BGY110F by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY110F
Description NARROW BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 4.77 dBm; Minimum Operating Frequency: 890 MHz; Maximum Voltage Standing Wave Ratio: 2; Gain: 32.3 dB;
Datasheet BGY110F Datasheet
In Stock267
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: COMPONENT
Maximum Input Power (CW): 4.77 dBm
Minimum Operating Frequency: 890 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 90 Cel
Maximum Operating Frequency: 915 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Gain: 32.3 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
267 - -

Popular Products

Category Top Products

935363184528 by NXP Semiconductors

935363184528

NXP Semiconductors

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
TGA2238-CP by Qorvo

TGA2238-CP

Qorvo

TGA2238-CP by Qorvo is a GAN technology RF amplifier with 28 dB gain, operating from 8-11 GHz. It has a max input power of 30 dBm and VSWR of 3, suitable for wideband high-power applications. This module operates b/w -40 to 85°C, drawing a max current of 650 mA at -2.6 to 28V supplies.
HMC478ST89E by Analog Devices

HMC478ST89E

Analog Devices

Analog Devices' HMC478ST89E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to 85°C.
AM-147-PIN by M/a-com Technology Solutions

AM-147-PIN

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;
HMC994A by Analog Devices

HMC994A

Analog Devices

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.
HMC499 by Analog Devices

HMC499

Analog Devices

Analog Devices' HMC499 is a wide band medium power RF amplifier with 12 dB gain and 20 dBm CW input power. Operating from -55°C to 85°C, it covers frequencies from 21 GHz to 32 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
HMC451LP3E by Hittite Microwave

HMC451LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 5000 MHz;
SGA3363ZSR by Qorvo

SGA3363ZSR

Qorvo

SGA3363ZSR by Qorvo is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. Operating from 0 to 5500 MHz, it has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact package.
HMC451LC3 by Analog Devices

HMC451LC3

Analog Devices

HMC451LC3 by Analog Devices is a wide band low power RF amplifier with 14 dB gain and operates b/w 5-20 GHz. It has a max input power of 10 dBm, requires 5V supply, and features a surface mount package ideal for RF & microwave applications.
NBB-400-SR by Rf Micro Devices

NBB-400-SR

Rf Micro Devices

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;
MSA-1105 by Broadcom

MSA-1105

Broadcom

Broadcom's MSA-1105 is a RF & Microwave Amplifier with 13 dBm CW input power, 1.7 VSWR, and 50 ohm impedance. Ideal for wide band low power applications from 50 MHz to 1300 MHz, it operates b/w -25°C to 85°C with a max supply current of 70 mA.
NBB-400-T1 by Rf Micro Devices

NBB-400-T1

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 8000 MHz;
TGA4521 by Triquint Semiconductor

TGA4521

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;
HMC475ST89ETR by Hittite Microwave

HMC475ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: Matte Tin (Sn);
MGA-61563-TR2G by Agilent Technologies

MGA-61563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 48 mA;
MGA-86576-TR1 by Broadcom

MGA-86576-TR1

Broadcom

Broadcom's MGA-86576-TR1 is a GAAS RF amplifier with 20dB gain, operating from 1500MHz to 8000MHz. It has a max input power of 13dBm and VSWR of 2.5, suitable for wideband low-power applications in RF & microwave systems. The component features surface mounting and requires a 5V power supply with a max current draw of 22mA.
MW7IC2725NBR1 by Freescale Semiconductor

MW7IC2725NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;
HMC478ST89E by Hittite Microwave

HMC478ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;
RF3827SR by Rf Micro Devices

RF3827SR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;