NXP Semiconductors - BGY113C

  1. Home
  2. NXP Semiconductors - BGY113C
BGY113C by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY113C
Description NARROW BAND HIGH POWER; Maximum Operating Frequency: 520 MHz; Maximum Operating Temperature: 90 Cel; Characteristic Impedance: 50 ohm; Gain: 38.5 dB; Maximum Input Power (CW): 7 dBm;
Datasheet BGY113C Datasheet
In Stock864
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Maximum Input Power (CW): 7 dBm
Minimum Operating Frequency: 470 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 90 Cel
Maximum Operating Frequency: 520 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 38.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
864 - -

Popular Products

Category Top Products

ADL8142ACPZN-R7-CSL by Analog Devices

ADL8142ACPZN-R7-CSL

Analog Devices

WIDE BAND LOW POWER;
HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.
HMC441LP3TR by Analog Devices

HMC441LP3TR

Analog Devices

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.
MMZ09312BT1 by NXP Semiconductors

MMZ09312BT1

NXP Semiconductors

The NXP Semiconductors MMZ09312BT1 is a wide band medium power RF amplifier with 29 dB gain, operating from 400 MHz to 1000 MHz. It has a max input power of 14 dBm and requires a 5V power supply with a max current draw of 83 mA. Ideal for applications requiring surface mount components in RF and microwave systems.
AMF-4F-02200230-15-13P by L-3 Narda-miteq

AMF-4F-02200230-15-13P

L-3 Narda-miteq

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.
AMMP-6220-TR1 by Broadcom

AMMP-6220-TR1

Broadcom

AMMP-6220-TR1 by Broadcom is a wide band low power RF amplifier with 22 dB gain, operating frequency range of 6-20 GHz. It features a max input power of 15 dBm and requires a 3V power supply. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
HMC565LC5 by Analog Devices

HMC565LC5

Analog Devices

Analog Devices' HMC565LC5 is a wide band low power RF amplifier with 16 dB gain and 50 ohm impedance. Operating from 6-20 GHz, it handles up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in compact designs.
NBB-400-SR by Qorvo

NBB-400-SR

Qorvo

Qorvo's NBB-400-SR RF amplifier operates at 3.9V with a temp range of -45 to 85°C. Featuring bipolar tech, it has 4 terminals and surface mount capability. Ideal for applications requiring ceramic package in RF & microwave systems.
HMC311LP3ETR by Hittite Microwave

HMC311LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;
MGA-81563-BLK by Agilent Technologies

MGA-81563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
AG303-86G by Qorvo

AG303-86G

Qorvo

The Qorvo AG303-86G is a wide band low power RF amplifier with 20.4 dB gain, operating from 0 to 6000 MHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF applications requiring high gain in the -40°C to 85°C temperature range.
MGA-61563-TR1G by Broadcom

MGA-61563-TR1G

Broadcom

Broadcom's MGA-61563-TR1G is a GAAS RF amplifier with 6.9 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 18 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3-5V with a supply current of 48 mA.
MGA-86576-TR1 by Broadcom

MGA-86576-TR1

Broadcom

Broadcom's MGA-86576-TR1 is a GAAS RF amplifier with 20dB gain, operating from 1500MHz to 8000MHz. It has a max input power of 13dBm and VSWR of 2.5, suitable for wideband low-power applications in RF & microwave systems. The component features surface mounting and requires a 5V power supply with a max current draw of 22mA.
BGM1013 by NXP Semiconductors

BGM1013

NXP Semiconductors

The NXP Semiconductors BGM1013 is a wide band low power RF amplifier with 24 dB gain. It operates from 100 MHz to 3000 MHz, with -10 dBm CW input power and 5V supply voltage. Ideal for applications requiring surface mount components in RF & microwave systems.
HMC311LP3E by Hittite Microwave

HMC311LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;
RF6886SR by Qorvo

RF6886SR

Qorvo

Qorvo's RF6886SR is a wide band high power amplifier with 31 dB gain, operating from 433 MHz to 470 MHz. It has a max input power of 12 dBm and VSWR of 5, suitable for RF & microwave applications requiring high power amplification in plastic/epoxy package.
CMD264P3 by Custom Mmic Design Services

CMD264P3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;
MAAL-011141-000PPR by M/a-com Technology Solutions

MAAL-011141-000PPR

M/a-com Technology Solutions

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.
HMC1087 by Analog Devices

HMC1087

Analog Devices

HMC1087 by Analog Devices is a wide band medium power RF amplifier with 10 dB gain. It operates b/w 2-20 GHz, handles up to 34 dBm CW input power, and has a VSWR of 4. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
TQP3M9009 by Triquint Semiconductor

TQP3M9009

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 150 mA;