NXP Semiconductors - BGY116E

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BGY116E by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY116E
Description NARROW BAND HIGH POWER; Maximum Input Power (CW): 10 dBm; Gain: 37.8 dB; Minimum Operating Frequency: 890 MHz; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 100 Cel;
Datasheet BGY116E Datasheet
In Stock1,403
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 3
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 890 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 950 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 37.8 dB
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