NXP Semiconductors - BGY2016,127

  1. Home
  2. NXP Semiconductors - BGY2016,127
BGY2016,127 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY2016,127
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,1.6"H.SPACE; Minimum Operating Temperature: -10 Cel;
Datasheet BGY2016,127 Datasheet
In Stock106
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 1805 MHz
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -10 Cel
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 2
Maximum Input Power (CW): 20.79 dBm
Package Equivalence Code: FLNG,1.6"H.SPACE
Technology: HYBRID
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 90 Cel
Maximum Operating Frequency: 1990 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 28 dB
Power Supplies (V): 5,26
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
106 - -

Popular Products

Category Top Products

SBB-4089Z by Sirenza Microdevices

SBB-4089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-4089Z is a GAAS wide band low power RF amplifier with 14 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply with a current draw of 92 mA. Ideal for applications requiring surface mount components in RF & microwave systems.
ERA-50SM by Mini-circuits

ERA-50SM

Mini-circuits

ERA-50SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring surface mount construction.
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
XP1050-QJ-0G0T by Mimix Broadband

XP1050-QJ-0G0T

Mimix Broadband

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 25 dBm; Minimum Operating Temperature: -40 Cel; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;
CHA3666-QAG by United Monolithic Semiconductor Sas

CHA3666-QAG

United Monolithic Semiconductor Sas

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.
HMC659LC5 by Hittite Microwave

HMC659LC5

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
SPF5043ZSR by Qorvo

SPF5043ZSR

Qorvo

Qorvo's SPF5043ZSR is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. This wide band low power device is ideal for applications requiring surface mount components in RF and microwave systems.
SPF5043ZSR by Rf Micro Devices

SPF5043ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.
MAX2659ELT/V+ by Analog Devices

MAX2659ELT/V+

Analog Devices

Analog Devices' MAX2659ELT/V+ is a BICMOS RF amplifier with 16.5 dB gain and 50 ohm impedance. It operates at temperatures from -40 to 85 °C, with a max input power of 10 dBm. Ideal for narrow band low power applications, it has a compact surface mount package with 6 terminals.
HMC409LP4ETR by Hittite Microwave

HMC409LP4ETR

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;
6003 by Teledyne Technologies

6003

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;
BGU8009,115 by NXP Semiconductors

BGU8009,115

NXP Semiconductors

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.
BGU6101,147 by NXP Semiconductors

BGU6101,147

NXP Semiconductors

The NXP Semiconductors BGU6101,147 is a wide band low power RF amplifier with 4dB gain. It operates b/w 40MHz to 4000MHz, suitable for various RF and microwave applications. With a max supply current of 10mA and operating temperature range from -40°C to 85°C, it is ideal for surface mount installations.
LEE-29 by Mini-circuits

LEE-29

Mini-circuits

Mini-circuits LEE-29 is a wide band low power RF amplifier with 13.3 dB gain, handling up to 15 dBm CW input power. It operates from 0 to 8000 MHz, with VSWR of 1.6 and characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring compact, high-performance amplification in temperature range -40 to 85°C.
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
MAX2630EUS+T by Analog Devices

MAX2630EUS+T

Analog Devices

Analog Devices' MAX2630EUS+T is a wide band low power RF amplifier with 11dB gain, operating b/w 800-1000MHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for surface mount applications in RF & microwave systems. With a compact package and low supply current of 11mA at 3V, it's ideal for high-frequency signal amplification.
GALI-6F+ by Mini-circuits

GALI-6F+

Mini-circuits

GALI-6F+ by Mini-circuits is a wide band low power RF amplifier with 10 dB gain, operating from 0 to 4000 MHz. It has a max input power of 20 dBm and VSWR of 2.2, suitable for surface mount applications in RF & microwave systems.
HMC498LC4 by Hittite Microwave

HMC498LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
GALI-39 by Mini-circuits

GALI-39

Mini-circuits

GALI-39 by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain, operating from 0 to 7000 MHz. It has a max input power of 13 dBm and VSWR of 2.3, suitable for RF & microwave applications requiring surface mount construction.