NXP Semiconductors - BGY208

  1. Home
  2. NXP Semiconductors - BGY208
BGY208 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY208
Description NARROW BAND HIGH POWER; Minimum Operating Frequency: 880 MHz; Gain: 30.7 dB; Maximum Voltage Standing Wave Ratio: 3; Maximum Operating Frequency: 915 MHz; Maximum Operating Temperature: 100 Cel;
Datasheet BGY208 Datasheet
In Stock4,155
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 3
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 880 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 915 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 30.7 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,155 - -

Popular Products

Category Top Products

BGA6130,118 by NXP Semiconductors

BGA6130,118

NXP Semiconductors

NXP Semiconductors' BGA6130,118 is an RF & Microwave Amplifier with 3.6V power supply, 8 terminals, and 250mA max supply current. It features a plastic/epoxy package body material and nickel palladium gold terminal finish. Ideal for surface mount applications in various electronic devices.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
SGA-2463Z by Sirenza Microdevices

SGA-2463Z

Sirenza Microdevices

SGA-2463Z by Sirenza Microdevices is a wide band low power RF amplifier with a gain of 17.1 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
MGA-81563-TR1 by Agilent Technologies

MGA-81563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
HMC816LP4ETR by Analog Devices

HMC816LP4ETR

Analog Devices

Analog Devices' HMC816LP4ETR is a GAAS technology RF amplifier with 2 functions, 24 terminals, and operates at temperatures from -40 to 85°C. It has a power supply of 5V and max supply current of 126mA. Ideal for wideband low-power RF or microwave applications due to its surface mount package body material made of plastic/epoxy.
RA18H1213G-101 by Mitsubishi Electric

RA18H1213G-101

Mitsubishi Electric

The Mitsubishi Electric RA18H1213G-101 is a RF amplifier module with 23 dB gain, operating b/w 1240-1300 MHz. It has a max input power of 24.77 dBm and VSWR of 3, suitable for narrowband high-power applications. With hybrid technology and operating temperatures from -30 to 110°C, it's ideal for various RF and microwave systems.
SGA3563Z by Qorvo

SGA3563Z

Qorvo

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
MAAL-011141-000PPR by M/a-com Technology Solutions

MAAL-011141-000PPR

M/a-com Technology Solutions

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.
HMC506LP4E by Analog Devices

HMC506LP4E

Analog Devices

Analog Devices' HMC506LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 7800-8700 MHz, and VSWR of 2. It is ideal for narrow band low power applications in temperatures ranging from -40 to 85°C.
HMC414MS8GE by Hittite Microwave

HMC414MS8GE

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Gain: 17 dB; Maximum Operating Frequency: 2800 MHz;
TQP9111 by Qorvo

TQP9111

Qorvo

Qorvo's TQP9111 is a narrow band medium power RF amplifier with 29.8 dB gain, operating from 1800-2700 MHz. It can handle up to 23 dBm CW input power and operates b/w -40 to 105°C. Ideal for RF & microwave applications requiring high gain and power handling capabilities.
GALI-51F by Mini-circuits

GALI-51F

Mini-circuits

GALI-51F by Mini-circuits is a wide band low power RF amplifier with a gain of 14 dB. It operates from 0 MHz to 4000 MHz and can handle a max input power of 13 dBm. This surface mount component is commonly used in RF and microwave applications requiring amplification.
SST13LP05-MLCF by Microchip Technology

SST13LP05-MLCF

Microchip Technology

SST13LP05-MLCF by Microchip Technology is a wide band medium power RF amplifier with 28 dB gain. It operates b/w 2400-2500 MHz, ideal for wireless communication applications. The component has 16 terminals, matte tin finish, and can handle temperatures from -40 to 85°C.
SMA3103-TL-E by Onsemi

SMA3103-TL-E

Onsemi

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
SGA6286Z by Qorvo

SGA6286Z

Qorvo

SGA6286Z by Qorvo is a wide band low power RF amplifier with 12.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, handling up to 18 dBm CW input power. This component is ideal for surface mount applications in RF and microwave systems.
MAX2232EEE+ by Analog Devices

MAX2232EEE+

Analog Devices

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.
MAX2232EEE+ by Maxim Integrated

MAX2232EEE+

Maxim Integrated

NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; Maximum Operating Temperature: 85 Cel;
QPA1019TR7 by Qorvo

QPA1019TR7

Qorvo

Qorvo's QPA1019TR7 is a wide band high power RF amplifier with 30 dB gain, operating from 4.5 GHz to 7 GHz. It can handle up to 28 dBm CW input power and has gold terminal finish. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.
XP1039-QJ-0G0T by Mimix Broadband

XP1039-QJ-0G0T

Mimix Broadband

WIDE BAND HIGH POWER; Gain: 15.5 dB; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 25 dBm; Terminal Finish: Matte Tin (Sn);
TGA4803 by Qorvo

TGA4803

Qorvo

Qorvo's TGA4803 is a wide band medium power RF amplifier with 8 dB gain and 18 dBm CW input power. Operating from 0-50000 MHz, it is ideal for various RF applications requiring high performance amplification in components.