NXP Semiconductors - BGY66B,112

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BGY66B,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY66B,112
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 24; Additional Features: LOW NOISE, HIGH RELIABILITY; Maximum Input Power (CW): 16.25 dBm;
Datasheet BGY66B,112 Datasheet
In Stock4,482
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 5 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 135 mA
Minimum Operating Temperature: -20 Cel
Maximum Input Power (CW): 16.25 dBm
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 120 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 24.5 dB
Power Supplies (V): 24
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Pricing (USD)

Qty. Unit Price Ext. Price
4,482 $18.080 $81,034.560

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