NXP Semiconductors - BLA6G1011-200R,112

  1. Home
  2. NXP Semiconductors - BLA6G1011-200R,112
BLA6G1011-200R,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA6G1011-200R,112
Description N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (Abs) (ID): 49 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 49 A; Maximum Operating Temperature: 225 Cel;
Datasheet BLA6G1011-200R,112 Datasheet
In Stock523
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): 49 A
Maximum Drain Current (Abs) (ID): 49 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
523 - -

Popular Products

Category Top Products

SQ2389ES-T1_GE3 by Vishay Intertechnology

SQ2389ES-T1_GE3

Vishay Intertechnology

Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FDN5630-F095 by Fairchild Semiconductor

FDN5630-F095

Fairchild Semiconductor

FDN5630-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.7A max drain current and 0.5W max power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or battery-operated devices. Operating at up to 150°C, it features surface mount configuration and metal-oxide semiconductor technology for enhanced performance.
2N7000 by Philips Semiconductors

2N7000

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
IRF840PBF by Vishay Siliconix

IRF840PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-220AB;
FDN5618P_NL by Fairchild Semiconductor

FDN5618P_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN5618P_NL is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 1.25A and 0.17 ohm On Resistance. The transistor operates in ENHANCEMENT MODE, has a Max Power Dissipation of 0.5W, and can handle up to 10A Pulsed Drain Current.
NDT456P by Onsemi

NDT456P

Onsemi

NDT456P by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.03 ohm On Resistance and can handle up to 20A Pulsed Drain Current.
IRF540SPBF by Vishay Siliconix

IRF540SPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 230 mJ; Maximum Drain-Source On Resistance: .077 ohm;
IRF540SPBF by International Rectifier

IRF540SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
IRF7842TRPBF by International Rectifier

IRF7842TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;
ZXMP6A17E6TA by Zetex Plc

ZXMP6A17E6TA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;
BSS138BK,215 by NXP Semiconductors

BSS138BK,215

NXP Semiconductors

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
IRF7425TRPBF-1 by International Rectifier

IRF7425TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
IRF7749L1TRPBF by International Rectifier

IRF7749L1TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1;
FDMC5614P by Fairchild Semiconductor

FDMC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: S-PDSO-F5;
IRF7309TRPBF by International Rectifier

IRF7309TRPBF

International Rectifier

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; JESD-30 Code: R-PDSO-G8; Maximum Drain Current (ID): 4 A;
BS170 by Topaz Semiconductor

BS170

Topaz Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Operating Temperature: 150 Cel;
BSC190N15NS3GATMA1 by Infineon Technologies

BSC190N15NS3GATMA1

Infineon Technologies

Infineon BSC190N15NS3GATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. Features include 200A IDM, 170mJ EAS, and 0.019 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 125W in a small outline package.
SI7850DP-T1-E3 by Vishay Intertechnology

SI7850DP-T1-E3

Vishay Intertechnology

SI7850DP-T1-E3 by Vishay Intertechnology is an N-channel power field effect transistor (FET) with a min DS breakdown voltage of 60V. It is designed for switching applications and has a max pulsed drain current of 40A. This surface mount transistor operates in enhancement mode and has a max operating temperature of 150°C.
IRLML6401GTRPBF by International Rectifier

IRLML6401GTRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 12 V;
SIA456DJ-T1-GE3 by Vishay Intertechnology

SIA456DJ-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.