NXP Semiconductors - BLA6G1011L-200RG

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BLA6G1011L-200RG by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA6G1011L-200RG
Description N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: SOURCE; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
Datasheet BLA6G1011L-200RG Datasheet
In Stock3,146
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 49 A
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 65 V
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
Moisture Sensitivity Level (MSL): NOT APPLICABLE
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