NXP Semiconductors - BLA6G1011LS-200RG

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BLA6G1011LS-200RG by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA6G1011LS-200RG
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;
Datasheet BLA6G1011LS-200RG Datasheet
In Stock3,997
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): 49 A
Maximum Drain Current (Abs) (ID): 49 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

Qty. Unit Price Ext. Price
3,997 $289.210 $1,155,972.370

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