New Jersey Semiconductor Products - BLF175

  1. Home
  2. New Jersey Semiconductor Products - BLF175
BLF175 by New Jersey Semiconductor Products

Image shown is a representation only.

Manufacturer New Jersey Semiconductor Products
Manufacturer's Part Number BLF175
Description N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
Datasheet BLF175 Datasheet
In Stock1,002
NAME DESCRIPTION
Other Names: 2156-BLF175
AMPREIBLF175
Minimum DS Breakdown Voltage: 125 V
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Drain Current (ID): 4 A
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,002 - -

Popular Products

Category Top Products

MRF1570FNT1 by Freescale Semiconductor

MRF1570FNT1

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
MRFX1K80NR5 by NXP Semiconductors

MRFX1K80NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
AFM906NT1 by NXP Semiconductors

AFM906NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
934061525112 by NXP Semiconductors

934061525112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;
MRF284S by Freescale Semiconductor

MRF284S

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-CDFP-F2; Terminal Form: FLAT;
A2T21S160-12SR3 by NXP Semiconductors

A2T21S160-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRFE6VP5150NR1 by NXP Semiconductors

MRFE6VP5150NR1

NXP Semiconductors

NXP Semiconductors' MRFE6VP5150NR1 is an N-CHANNEL RF Power FET with 133V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. The transistor is a 2-element device with PLASTIC/EPOXY package and FLANGE MOUNT style, suitable for surface mount installations.
SD2932W by STMicroelectronics

SD2932W

STMicroelectronics

SD2932W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 500W max power dissipation. Ideal for high-power applications, it operates at up to 200°C.
A2T21S260W12NR3 by NXP Semiconductors

A2T21S260W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;
A5G07H800W19NR3 by NXP Semiconductors

A5G07H800W19NR3

NXP Semiconductors

RF Power Field-Effect Transistors;
MRFE6VP61K25HR6 by Freescale Semiconductor

MRFE6VP61K25HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1300 W; Maximum Time At Peak Reflow Temperature (s): 40; No. of Terminals: 4;
BLF246,112 by NXP Semiconductors

BLF246,112

NXP Semiconductors

BLF246,112 by NXP Semiconductors is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the VERY HIGH FREQUENCY BAND and has a max ID of 13A. Ideal for AMPLIFIER applications, this METAL-OXIDE SEMICONDUCTOR FET is designed for ENHANCEMENT MODE operation in a FLANGE MOUNT package.
MRF374 by New Jersey Semiconductor Products

MRF374

New Jersey Semiconductor Products

N-CHANNEL; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON;
SD2922 by STMicroelectronics

SD2922

STMicroelectronics

SD2922 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a min DS breakdown voltage of 125V and a max drain current of 40A, making it ideal for high-performance RF amplifiers. Its compact flange mount design ensures efficient surface mounting in various electronic devices.
A2T26H300-24SR6 by Freescale Semiconductor

A2T26H300-24SR6

Freescale Semiconductor

RF Power Field-Effect Transistors;
PD54003-E by STMicroelectronics

PD54003-E

STMicroelectronics

STMicroelectronics' PD54003-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. With a max ID of 4A and 52.8W power dissipation, it's ideal for high-power RF amplification needs.
CGHV1F025S by Wolfspeed

CGHV1F025S

Wolfspeed

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF7P20040HSR3 by Freescale Semiconductor

MRF7P20040HSR3

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;
MRF8S21200HSR6 by Freescale Semiconductor

MRF8S21200HSR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
SD57060-01 by STMicroelectronics

SD57060-01

STMicroelectronics

SD57060-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures reliable performance up to 200 °C.