PD20015TR-E by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	PD20015TR-E
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 7 A;
Datasheet	PD20015TR-E Datasheet
In Stock	1,701

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	7 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	79 W
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PDFM-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	165 Cel
Case Connection:	SOURCE
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	7 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,701	-	-

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