NXP Semiconductors - BLA6H0912-500,112

BLA6H0912-500,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA6H0912-500,112
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 100 V;
Datasheet BLA6H0912-500,112 Datasheet
In Stock966
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 54 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 500 W
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Reference Standard: IEC-60134
Maximum Drain Current (Abs) (ID): 54 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
966 $596.362 $576,085.692

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