NXP Semiconductors - BLA6H0912L-1000

  1. Home
  2. NXP Semiconductors - BLA6H0912L-1000
BLA6H0912L-1000 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA6H0912L-1000
Description RF Power Field-Effect Transistors;
Datasheet BLA6H0912L-1000 Datasheet
In Stock5,499
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
5,499 - -

Popular Products

Category Top Products

A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
934064592118 by NXP Semiconductors

934064592118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
ST16045 by STMicroelectronics

ST16045

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
PD84008TR-E by STMicroelectronics

PD84008TR-E

STMicroelectronics

PD84008TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.
CGH40010P by Wolfspeed

CGH40010P

Wolfspeed

CGH40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND, featuring HIGH ELECTRON MOBILITY GaN technology. This amplifier transistor has a max temperature of 105°C and comes in a RECTANGULAR package for surface mount applications.
MRF181ZR1 by Onsemi

MRF181ZR1

Onsemi

MRF181ZR1 by Onsemi is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 2A, making it ideal for amplifier applications. The transistor features a CERAMIC, METAL-SEALED COFIRED package with GULL WING terminals for surface mount installation.
A2T26H300-24SR6 by Freescale Semiconductor

A2T26H300-24SR6

Freescale Semiconductor

RF Power Field-Effect Transistors;
AFM906NT1 by NXP Semiconductors

AFM906NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
A3G35H100-04SR3 by NXP Semiconductors

A3G35H100-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL; Maximum Operating Temperature: 225 Cel;
NE5550979A-A by Renesas Electronics

NE5550979A-A

Renesas Electronics

NE5550979A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 3A max drain current and 25W max power dissipation. It operates at up to 150°C, suitable for high-power RF applications in surface-mount configurations.
LET9060TR by STMicroelectronics

LET9060TR

STMicroelectronics

LET9060TR by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND for AMPLIFIER applications. This SINGLE configuration transistor has a max ID of 12A and comes in a PLASTIC/EPOXY package with GULL WING terminals.
RF5L08350CB4 by STMicroelectronics

RF5L08350CB4

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF6VP3450HR5 by NXP Semiconductors

MRF6VP3450HR5

NXP Semiconductors

NXP Semiconductors' MRF6VP3450HR5 is a RF Power FET with 110V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features N-CHANNEL polarity, SINGLE configuration, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for AMPLIFIER applications, this transistor has a max temp of 225°C and comes in a CERAMIC package with FLANGE MOUNT style.
TSD2903 by STMicroelectronics

TSD2903

STMicroelectronics

TSD2903 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, with a max Drain Current of 3.9A, making it ideal for amplifier applications in enhancement mode.
BLF888D by Ampleon Netherlands B V

BLF888D

Ampleon Netherlands B V

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934062175112 by NXP Semiconductors

934062175112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Elements: 1; Transistor Element Material: SILICON;
AFT09S220-02NR3 by NXP Semiconductors

AFT09S220-02NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Terminal Finish: Tin (Sn); JESD-609 Code: e3;
CGH40006S by Wolfspeed

CGH40006S

Wolfspeed

CGH40006S by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C BAND applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode with a SINGLE configuration and SMALL OUTLINE package style for surface mount assembly.
STAC2942B by STMicroelectronics

STAC2942B

STMicroelectronics

STAC2942B by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, a breakdown voltage of 130 V, and can dissipate up to 625 W. Ideal for high-performance RF amplification in compact designs.
PD20015C by STMicroelectronics

PD20015C

STMicroelectronics

PD20015C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the L band. This surface-mount transistor supports high power dissipation up to 93 W.