NXP Semiconductors - BLA6H1011-600

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BLA6H1011-600 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLA6H1011-600
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: SOURCE; No. of Terminals: 4;
Datasheet BLA6H1011-600 Datasheet
In Stock4,079
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 72 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
4,079 $568.380 $2,318,422.020

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