NXP Semiconductors - BLC6G20LS-110

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BLC6G20LS-110 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLC6G20LS-110
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER;
Datasheet BLC6G20LS-110 Datasheet
In Stock1,126
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Additional Features: HIGH EFFICIENCY
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): 1
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